公开(公告)号：US20020142519A1

公开(公告)日：2002-10-03

申请号：US10081296

申请日：2002-02-20

Applicant: STMICROELECTRONICS S.A.

Inventor： Philippe Coronel ,  Francois Leverd ,  Paul Ferreira

IPC: H01L021/44

CPC classification number: H01L21/76897 ,  H01L21/76831 ,  H01L21/76841

Abstract: The invention relates to a process for protection of the grid of a transistor in an integrated circuit for production of a local interconnection pad straddling over the grid and the silicon substrate on which it is formed. The process consists of applying a double dielectric-conducting layer on the transistor grid into which a polysilicon layer is added in order to use the selectivity principle, which is large considering the etching of polysilicon with respect to the oxide in which the local interconnection pad is formed. Furthermore, with the process according to the invention, a silicidation treatment can be applied beforehand on the active areas of the transistor and the grid.

Abstract translation: 本发明涉及一种用于保护集成电路中的晶体管栅格的方法，用于制造跨越栅极的局部互连焊盘和形成在其上的硅衬底。 该方法包括在晶体管栅格上施加双电介质传导层，其中添加多晶硅层以便使用选择性原理，考虑到多晶硅相对于本地互连衬垫是 形成。 此外，根据本发明的方法，可以预先在晶体管和栅极的有源区上施加硅化处理。

公开(公告)号：US20030016571A1

公开(公告)日：2003-01-23

申请号：US10176386

申请日：2002-06-20

Applicant: STMICROELECTRONICS S.A.

Inventor： Paul Ferreira ,  Philippe Coronel

IPC: G11C007/00

CPC classification number: H01L21/823892 ,  H01L21/033 ,  H01L21/266 ,  H01L21/823807

Abstract: The invention relates to a process for treating a portion of the surface of a substrate according to a first and second surface treatments which are different from each other and are intended respectively for a first group of regions and for a second group of regions of the surface portion, the two groups of regions being mutually complementary with respect to the surface portion, the process making it possible to use only a single operation of positioning a mask which differentiates the regions of the first and second groups of regions, using the same protective materials for the regions of each group of regions against the effects of the treatment intended for the regions of the other group of regions. Application to the fabrication of semiconductor products.

Abstract translation: 本发明涉及一种根据彼此不同的第一和第二表面处理来处理基材表面的一部分的方法，分别用于第一组区域和第二组表面区域 部分，两组区域相对于表面部分互相互补，该方法使得仅使用仅使用相同保护材料来区分第一和第二组区域的掩模的单一定位操作 对于每个地区的区域，针对其他地区区域的治疗效果。 适用于制造半导体产品。