公开(公告)号：US11696504B2

公开(公告)日：2023-07-04

申请号：US17321252

申请日：2021-05-14

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Paolo Ferrari ,  Flavio Francesco Villa ,  Lucia Zullino ,  Andrea Nomellini ,  Luca Seghizzi ,  Luca Zanotti ,  Bruno Murari ,  Martina Scolari

IPC: H10N10/855 ,  H10N10/01 ,  H10N10/17

CPC classification number: H10N10/855 ,  H10N10/01 ,  H10N10/17

Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal and an output electrical terminal electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

公开(公告)号：US11498335B2

公开(公告)日：2022-11-15

申请号：US17107683

申请日：2020-11-30

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Domenico Giusti ,  Marco Ferrera ,  Carlo Luigi Prelini ,  Mauro Cattaneo ,  Andrea Nomellini

IPC: B41J2/16 ,  B81C1/00 ,  B41J2/14

Abstract: A method for manufacturing a device for ejecting a fluid, including the steps of: forming, in a first semiconductor wafer that houses a nozzle of the ejection device, a first structural layer; removing selective portions of the first structural layer to form a first portion of a chamber for containing the fluid; removing, in a second semiconductor wafer that houses an actuator of the ejection device, selective portions of a second structural layer to form a second portion of the chamber; and coupling together the first and second semiconductor wafers so that the first portion directly faces the second portion, thus forming the chamber. The first portion defines a part of volume of the chamber that is larger than a respective part of volume of the chamber defined by the second portion.

公开(公告)号：US11871668B2

公开(公告)日：2024-01-09

申请号：US17158904

申请日：2021-01-26

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Paolo Ferrari ,  Flavio Francesco Villa ,  Luca Zanotti ,  Andrea Nomellini ,  Luca Seghizzi

IPC: H10N10/17 ,  H10N10/01

CPC classification number: H10N10/17 ,  H10N10/01

Abstract: A thermoelectric generator includes a substrate and one or more thermoelectric elements on the substrate and each configured to convert a thermal drop across the thermoelectric elements into an electric potential by Seebeck effect. The thermoelectric generator includes a cavity between the substrate and the thermoelectric elements. The thermoelectric generator includes, within the cavity, a support structure for supporting the thermoelectric elements. The support structure has a thermal conductivity lower than a thermal conductivity of the substrate.