MULTIBAND DOUBLE JUNCTION PHOTODIODE AND RELATED MANUFACTURING PROCESS
    2.
    发明申请
    MULTIBAND DOUBLE JUNCTION PHOTODIODE AND RELATED MANUFACTURING PROCESS 有权
    多功能双功能光电及相关制造工艺

    公开(公告)号:US20160260861A1

    公开(公告)日:2016-09-08

    申请号:US14640663

    申请日:2015-03-06

    Abstract: A photodiode structure is based on the use of a double junction sensitive to different wavelength bands based on a magnitude of a reverse bias applied to the photodiode. The monolithic integration of a sensor with double functionality in a single chip allows realization of a low cost ultra-compact sensing element in a single packaging useful in many applications which require simultaneous or spatially synchronized detection of optical photons in different spectral regions.

    Abstract translation: 光电二极管结构基于对施加到光电二极管的反向偏压的幅度的不同波长带敏感的双结的使用。 在单个芯片中具有双重功能的传感器的单片集成允许在需要在不同光谱区域中同时或空间同步检测光子的许多应用中的单个封装中实现低成本超小型感测元件。

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