公开(公告)号：US11830794B2

公开(公告)日：2023-11-28

申请号：US17367086

申请日：2021-07-02

Applicant: STMicroelectronics S.r.l.

Inventor： Cristiano Gianluca Stella ,  Fabio Russo

IPC: H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L23/49568 ,  H01L21/4825 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/49527 ,  H01L23/49562 ,  H01L23/49575

Abstract: An HV MOSFET device has a body integrating source conductive regions. Projecting gate structures are disposed above the body, laterally offset with respect to the source conductive regions. Source contact regions, of a first metal, are arranged on the body in electric contact with the source conductive regions, and source connection regions, of a second metal, are arranged above the source contact regions and have a height protruding with respect to the projecting gate structures. A package includes a metal support bonded to a second surface of the body, and a dissipating region, above the first surface of the semiconductor die. The dissipating region includes a conductive plate having a planar face bonded to the source connection regions and spaced from the projecting gate structures. A package mass of dielectric material is disposed between the support and the dissipating region and incorporates the semiconductor die. The dissipating region is a DBC-type insulation multilayer.

公开(公告)号：US10770576B2

公开(公告)日：2020-09-08

申请号：US16154411

申请日：2018-10-08

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Fabio Russo ,  Cristiano Gianluca Stella

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/08 ,  H01L23/538 ,  H01L23/00 ,  H01L23/495 ,  H01L29/423 ,  H01L29/66 ,  H01L23/485 ,  H01L23/48

Abstract: A MOSFET device is integrated in a body of semiconductor material of a first conductivity type accommodating a body region, of a second conductivity type, and a source region, of the first conductivity type. A gate region extends over the top surface of the body; a source pad extends over the first top surface and is electrically coupled to the source region, a first gate pad extends over the first main surface, alongside the source pad, and is electrically coupled to the gate region; a drain pad extends over the rear surface and is electrically coupled to the body; a second gate pad extends over the rear surface, alongside the drain pad; and a conductive via extends through the body and electrically couples the gate region to the second gate pad.