公开(公告)号：US20230282757A1

公开(公告)日：2023-09-07

申请号：US18181409

申请日：2023-03-09

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone RASCUNÁ ,  Gabriele BELLOCCHI ,  Paolo BADALÁ ,  Isodiana CRUPI

IPC: H01L31/101 ,  H01L31/0224 ,  H01L31/103 ,  H01L31/18

CPC classification number: H01L31/1016 ,  H01L31/022408 ,  H01L31/022466 ,  H01L31/103 ,  H01L31/1812 ,  H01L31/1864 ,  H01L31/1884

Abstract: A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.

公开(公告)号：US20210399154A1

公开(公告)日：2021-12-23

申请号：US17344558

申请日：2021-06-10

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Simone RASCUNÁ ,  Gabriele BELLOCCHI ,  Paolo BADALÁ ,  Isodiana CRUPI

IPC: H01L31/101 ,  H01L31/103 ,  H01L31/0224 ,  H01L31/18

Abstract: A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.