HIGH-EFFICIENCY DRIVING STAGE FOR PHASE CHANGE NON-VOLATILE MEMORY DEVICES
    1.
    发明申请
    HIGH-EFFICIENCY DRIVING STAGE FOR PHASE CHANGE NON-VOLATILE MEMORY DEVICES 有权
    相位改变非易失性存储器件的高效驱动级

    公开(公告)号:US20130229863A1

    公开(公告)日:2013-09-05

    申请号:US13771663

    申请日:2013-02-20

    Abstract: A driving stage for a phase change non-volatile memory device may have an output driving unit which supplies an output driving current during an operation of programming of at least one memory cell. A driving-control unit receives an input current and generates at output a first control signal that controls supply of the output driving current by the output driving unit in such a way that a value of this current has a desired relation with the input current. A level-shifter element, set between the output of the driving-control unit and a control input of the output driving unit, determines a level shift of the voltage of the first control signal so as to supply to the control input of the output driving unit a second control signal, having a voltage value that is increased with respect to, and is a function of, the first control signal.

    Abstract translation: 用于相变非易失性存储器件的驱动级可以具有输出驱动单元,其在至少一个存储器单元的编程操作期间提供输出驱动电流。 驱动控制单元接收输入电流并在输出端产生控制由输出驱动单元输出驱动电流的供给的第一控制信号,使得该电流的值与输入电流具有期望的关系。 设置在驱动控制单元的输出和输出驱动单元的控制输入之间的电平移动元件确定第一控制信号的电压的电平偏移,以便提供给输出驱动的控制输入 单元具有第二控制信号,具有相对于第一控制信号而增加并且是第一控制信号的函数的电压值。

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