公开(公告)号：US20200025843A1

公开(公告)日：2020-01-23

申请号：US16514469

申请日：2019-07-17

Applicant: STMicroelectronics S.r.l.

Inventor： Marco Crescentini ,  Michele Biondi ,  Marco Tartagni ,  Aldo Romani ,  Roberto Canegallo

IPC: G01R33/07

Abstract: A planar Hall sensing element includes a first pair of sensing electrodes mutually opposed in a first direction across the sensing element and a second pair of sensing electrodes mutually opposed in a second direction across the sensing element, with the second direction orthogonal to the first direction. A first pair of bias electrodes is mutually opposed in a third direction and a second pair mutually opposed in a fourth direction across the sensing element, the fourth direction orthogonal to the third direction. The third and fourth directions are rotated 45° with respect to the first and second directions so each sensing electrode is arranged between a bias electrode of the first pair and second pair. A DC bias current is supplied between the first and second pairs of bias electrodes. First and second Hall voltages are sensed at the first and second pairs of sensing electrodes.

公开(公告)号：US11619688B2

公开(公告)日：2023-04-04

申请号：US17465433

申请日：2021-09-02

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Crescentini ,  Michele Biondi ,  Marco Tartagni ,  Aldo Romani ,  Roberto Antonio Canegallo

IPC: G01R33/06 ,  G01R33/07

Abstract: A planar Hall sensing element includes a first pair of sensing electrodes mutually opposed in a first direction across the sensing element and a second pair of sensing electrodes mutually opposed in a second direction across the sensing element, with the second direction orthogonal to the first direction. A first pair of bias electrodes is mutually opposed in a third direction and a second pair mutually opposed in a fourth direction across the sensing element, the fourth direction orthogonal to the third direction. The third and fourth directions are rotated 45° with respect to the first and second directions so each sensing electrode is arranged between a bias electrode of the first pair and second pair. A DC bias current is supplied between the first and second pairs of bias electrodes. First and second Hall voltages are sensed at the first and second pairs of sensing electrodes.

公开(公告)号：US11119160B2

公开(公告)日：2021-09-14

申请号：US16514469

申请日：2019-07-17

Applicant: STMicroelectronics S.r.l.

Inventor： Marco Crescentini ,  Michele Biondi ,  Marco Tartagni ,  Aldo Romani ,  Roberto Canegallo

IPC: G01R33/06 ,  G01R33/07

Abstract: A planar Hall sensing element includes a first pair of sensing electrodes mutually opposed in a first direction across the sensing element and a second pair of sensing electrodes mutually opposed in a second direction across the sensing element, with the second direction orthogonal to the first direction. A first pair of bias electrodes is mutually opposed in a third direction and a second pair mutually opposed in a fourth direction across the sensing element, the fourth direction orthogonal to the third direction. The third and fourth directions are rotated 45° with respect to the first and second directions so each sensing electrode is arranged between a bias electrode of the first pair and second pair. A DC bias current is supplied between the first and second pairs of bias electrodes. First and second Hall voltages are sensed at the first and second pairs of sensing electrodes.