公开(公告)号：US20200025843A1

公开(公告)日：2020-01-23

申请号：US16514469

申请日：2019-07-17

Applicant: STMicroelectronics S.r.l.

Inventor： Marco Crescentini ,  Michele Biondi ,  Marco Tartagni ,  Aldo Romani ,  Roberto Canegallo

IPC: G01R33/07

Abstract: A planar Hall sensing element includes a first pair of sensing electrodes mutually opposed in a first direction across the sensing element and a second pair of sensing electrodes mutually opposed in a second direction across the sensing element, with the second direction orthogonal to the first direction. A first pair of bias electrodes is mutually opposed in a third direction and a second pair mutually opposed in a fourth direction across the sensing element, the fourth direction orthogonal to the third direction. The third and fourth directions are rotated 45° with respect to the first and second directions so each sensing electrode is arranged between a bias electrode of the first pair and second pair. A DC bias current is supplied between the first and second pairs of bias electrodes. First and second Hall voltages are sensed at the first and second pairs of sensing electrodes.

公开(公告)号：US11619688B2

公开(公告)日：2023-04-04

申请号：US17465433

申请日：2021-09-02

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Crescentini ,  Michele Biondi ,  Marco Tartagni ,  Aldo Romani ,  Roberto Antonio Canegallo

IPC: G01R33/06 ,  G01R33/07

Abstract: A planar Hall sensing element includes a first pair of sensing electrodes mutually opposed in a first direction across the sensing element and a second pair of sensing electrodes mutually opposed in a second direction across the sensing element, with the second direction orthogonal to the first direction. A first pair of bias electrodes is mutually opposed in a third direction and a second pair mutually opposed in a fourth direction across the sensing element, the fourth direction orthogonal to the third direction. The third and fourth directions are rotated 45° with respect to the first and second directions so each sensing electrode is arranged between a bias electrode of the first pair and second pair. A DC bias current is supplied between the first and second pairs of bias electrodes. First and second Hall voltages are sensed at the first and second pairs of sensing electrodes.

公开(公告)号：US11119160B2

公开(公告)日：2021-09-14

申请号：US16514469

申请日：2019-07-17

Applicant: STMicroelectronics S.r.l.

Inventor： Marco Crescentini ,  Michele Biondi ,  Marco Tartagni ,  Aldo Romani ,  Roberto Canegallo

IPC: G01R33/06 ,  G01R33/07

Abstract: A planar Hall sensing element includes a first pair of sensing electrodes mutually opposed in a first direction across the sensing element and a second pair of sensing electrodes mutually opposed in a second direction across the sensing element, with the second direction orthogonal to the first direction. A first pair of bias electrodes is mutually opposed in a third direction and a second pair mutually opposed in a fourth direction across the sensing element, the fourth direction orthogonal to the third direction. The third and fourth directions are rotated 45° with respect to the first and second directions so each sensing electrode is arranged between a bias electrode of the first pair and second pair. A DC bias current is supplied between the first and second pairs of bias electrodes. First and second Hall voltages are sensed at the first and second pairs of sensing electrodes.

公开(公告)号：US10571531B2

公开(公告)日：2020-02-25

申请号：US15918809

申请日：2018-03-12

Applicant: STMicroelectronics S.r.l.

Inventor： Marco Crescentini ,  Marco Tartagni ,  Aldo Romani ,  Roberto Canegallo ,  Marco Marchesi ,  Domenico Cristaudo

IPC: G01R33/06 ,  G01R33/07 ,  G01R33/038 ,  G01R33/028 ,  G01R33/02 ,  G01R33/00 ,  B64G1/36 ,  G01R15/20 ,  G01R33/12 ,  G01N27/90 ,  G11C19/08 ,  H01F7/02

Abstract: A Hall sensor may include a Hall sensing element configured to produce a Hall voltage indicative of a magnetic field when traversed by an electric current, and a first pair of bias electrodes mutually opposed in a first direction across the Hall sensing element. The Hall sensor may include a second pair of bias electrodes mutually opposed in a second direction across the Hall sensing element. The Hall sensor may include a first pair of sensing electrodes mutually opposed in a third direction across the Hall sensing element, and a second pair of sensing electrodes mutually opposed in a fourth direction across the Hall sensing element. The fourth direction may be orthogonal to the third direction, each sensing electrode being between a bias electrode of the first pair and a bias electrode of the second pair.

公开(公告)号：US20180203076A1

公开(公告)日：2018-07-19

申请号：US15918809

申请日：2018-03-12

Applicant: STMicroelectronics S.r.l.

Inventor： Marco Crescentini ,  Marco Tartagni ,  Aldo Romani ,  Roberto Canegallo ,  Marco Marchesi ,  Domenico Cristaudo

IPC: G01R33/07 ,  G01R33/00 ,  G01R33/02 ,  G01R33/038 ,  G01R33/028 ,  G01R15/20 ,  G01R33/12

Abstract: A Hall sensor may include a Hall sensing element configured to produce a Hall voltage indicative of a magnetic field when traversed by an electric current, and a first pair of bias electrodes mutually opposed in a first direction across the Hall sensing element. The Hall sensor may include a second pair of bias electrodes mutually opposed in a second direction across the Hall sensing element. The Hall sensor may include a first pair of sensing electrodes mutually opposed in a third direction across the Hall sensing element, and a second pair of sensing electrodes mutually opposed in a fourth direction across the Hall sensing element. The fourth direction may be orthogonal to the third direction, each sensing electrode being between a bias electrode of the first pair and a bias electrode of the second pair.

公开(公告)号：US09952291B2

公开(公告)日：2018-04-24

申请号：US15142270

申请日：2016-04-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Crescentini ,  Marco Tartagni ,  Aldo Romani ,  Roberto Canegallo ,  Marco Marchesi ,  Domenico Cristaudo

IPC: G01R33/06 ,  G01R33/07 ,  G01R33/038 ,  G01R33/028 ,  G01R33/02 ,  G01R33/00 ,  G01R15/20 ,  G01R33/12

CPC classification number: G01R33/075 ,  G01R15/20 ,  G01R33/0029 ,  G01R33/0206 ,  G01R33/028 ,  G01R33/0283 ,  G01R33/038 ,  G01R33/07 ,  G01R33/1215

Abstract: A Hall sensor may include a Hall sensing element configured to produce a Hall voltage indicative of a magnetic field when traversed by an electric current, and a first pair of bias electrodes mutually opposed in a first direction across the Hall sensing element. The Hall sensor may include a second pair of bias electrodes mutually opposed in a second direction across the Hall sensing element. The Hall sensor may include a first pair of sensing electrodes mutually opposed in a third direction across the Hall sensing element, and a second pair of sensing electrodes mutually opposed in a fourth direction across the Hall sensing element. The fourth direction may be orthogonal to the third direction, each sensing electrode being between a bias electrode of the first pair and a bias electrode of the second pair.