Abstract:
In one example, a circuit includes a first node to receive an analog signal that is an amplitude modulated radio-frequency signal for a digital signal. An output node is configured to provide an output signal indicative of rising and falling edges of an envelope of the analog signal. The rising and falling edges are indicative of rising and falling edges of the digital signal. A first current path is disposed between a power supply node and the first node. The first current path includes a first transistor coupled between the first node and a first bias source. The first bias source is coupled between the first transistor and the power supply node. The output node is coupled to a first intermediate node in the first current path between the transistor and the first bias source. A control terminal of the first transistor is coupled to the output node via a feedback network.
Abstract:
An asynchronous level shifter electronic circuit including: a transmitter, which can be coupled to a first voltage and generates a communication signal; a receiver, which can be coupled to a second voltage; and a capacitive coupling stage, which receives the communication signal and supplies a corresponding filtered signal to the receiver. The receiver includes: a threshold device, which has an input terminal and an output terminal and switches an electrical quantity on the output terminal between a first value and a second value, as a function of corresponding transitions through a threshold of a first intermediate signal present on the input terminal, to generate a second intermediate signal; and a biasing circuit, which generates the first intermediate signal to have a d.c. component, which is a function of the second intermediate signal, and superposed on which is a variable component, which is a function of the filtered signal.
Abstract:
An asynchronous level shifter electronic circuit including: a transmitter, which can be coupled to a first voltage and generates a communication signal; a receiver, which can be coupled to a second voltage; and a capacitive coupling stage, which receives the communication signal and supplies a corresponding filtered signal to the receiver. The receiver includes: a threshold device, which has an input terminal and an output terminal and switches an electrical quantity on the output terminal between a first value and a second value, as a function of corresponding transitions through a threshold of a first intermediate signal present on the input terminal, to generate a second intermediate signal; and a biasing circuit, which generates the first intermediate signal to have a d.c. component, which is a function of the second intermediate signal, and superposed on which is a variable component, which is a function of the filtered signal.
Abstract:
An embodiment memory device comprises a plurality of memory cells, each exhibiting a transconductance depending on a value of a stored bit, a plurality of bit lines associated with respective groups of memory cells, each bit line configured to flow a respective electric current indicative of the bit stored in a selected memory cell of the respective group of memory cells, and a computing circuit providing an output electric quantity indicative of a linear combination of a plurality of input electric quantities. The computing circuit comprises a biasing stage configured to bias each bit line with a respective input electric quantity, the electric current flowing through each bit line based on a product of the respective input electric quantity and the transconductance of the selected memory cell, and a combining stage for combining the electric currents flowing through the plurality of bit lines thereby obtaining the output electric quantity.
Abstract:
A planar Hall sensing element includes a first pair of sensing electrodes mutually opposed in a first direction across the sensing element and a second pair of sensing electrodes mutually opposed in a second direction across the sensing element, with the second direction orthogonal to the first direction. A first pair of bias electrodes is mutually opposed in a third direction and a second pair mutually opposed in a fourth direction across the sensing element, the fourth direction orthogonal to the third direction. The third and fourth directions are rotated 45° with respect to the first and second directions so each sensing electrode is arranged between a bias electrode of the first pair and second pair. A DC bias current is supplied between the first and second pairs of bias electrodes. First and second Hall voltages are sensed at the first and second pairs of sensing electrodes.
Abstract:
In one example, a circuit includes a first node to receive an analog signal that is an amplitude modulated radio-frequency signal for a digital signal. An output node is configured to provide an output signal indicative of rising and falling edges of an envelope of the analog signal. The rising and falling edges are indicative of rising and falling edges of the digital signal. A first current path is disposed between a power supply node and the first node. The first current path includes a first transistor coupled between the first node and a first bias source. The first bias source is coupled between the first transistor and the power supply node. The output node is coupled to a first intermediate node in the first current path between the transistor and the first bias source. A control terminal of the first transistor is coupled to the output node via a feedback network.
Abstract:
A communication cell for an integrated circuit includes a physical interface configured to supply an input signal (for example, a capacitive signal or an ohmic signal). A receiver circuit operates to receive the capacitive signal and generate a first intermediate signal. A buffer circuit operates to receive the ohmic signal and generate a second intermediate signal. An output stage including a selector device (for example, a multiplexer) configured to receive the first and second intermediate signals and selectively pass only one of those signals to the integrated circuit based on operating condition. The input signal may further be an inductive signal, with the output stage further functioning to selectively pass that signal based on operating condition.
Abstract:
A communication cell for an integrated circuit includes a physical interface configured to supply an input signal (for example, a capacitive signal or an ohmic signal). A receiver circuit operates to receive the capacitive signal and generate a first intermediate signal. A buffer circuit operates to receive the ohmic signal and generate a second intermediate signal. An output stage including a selector device (for example, a multiplexer) configured to receive the first and second intermediate signals and selectively pass only one of those signals to the integrated circuit based on operating condition. The input signal may further be an inductive signal, with the output stage further functioning to selectively pass that signal based on operating condition.
Abstract:
A planar Hall sensing element includes a first pair of sensing electrodes mutually opposed in a first direction across the sensing element and a second pair of sensing electrodes mutually opposed in a second direction across the sensing element, with the second direction orthogonal to the first direction. A first pair of bias electrodes is mutually opposed in a third direction and a second pair mutually opposed in a fourth direction across the sensing element, the fourth direction orthogonal to the third direction. The third and fourth directions are rotated 45° with respect to the first and second directions so each sensing electrode is arranged between a bias electrode of the first pair and second pair. A DC bias current is supplied between the first and second pairs of bias electrodes. First and second Hall voltages are sensed at the first and second pairs of sensing electrodes.
Abstract:
A Hall sensor may include a Hall sensing element configured to produce a Hall voltage indicative of a magnetic field when traversed by an electric current, and a first pair of bias electrodes mutually opposed in a first direction across the Hall sensing element. The Hall sensor may include a second pair of bias electrodes mutually opposed in a second direction across the Hall sensing element. The Hall sensor may include a first pair of sensing electrodes mutually opposed in a third direction across the Hall sensing element, and a second pair of sensing electrodes mutually opposed in a fourth direction across the Hall sensing element. The fourth direction may be orthogonal to the third direction, each sensing electrode being between a bias electrode of the first pair and a bias electrode of the second pair.