公开(公告)号：US20230206971A1

公开(公告)日：2023-06-29

申请号：US18175375

申请日：2023-02-27

Applicant: STMICROELECTRONICS S.r.l. ,  STMicroelectronics International N.V.

Inventor： Vivek TYAGI ,  Vikas RANA ,  Chantal AURICCHIO ,  Laura CAPECCHI

IPC: G11C7/12 ,  G11C7/06 ,  G11C11/4094 ,  G11C11/4091 ,  G11C7/22

CPC classification number: G11C7/12 ,  G11C7/065 ,  G11C11/4094 ,  G11C11/4091 ,  G11C7/222

Abstract: A read signal generator generates read signals to control read operations of a memory array. The read signal generator can be selectively controlled to generate an oscillating signal having a period that corresponds to a feature one of the read signals. The oscillating signal is passed to a frequency divider that divides the oscillating signal and provides the divided oscillating signal to an output pad. The frequency of the oscillating signal can be measured at the output pad. The frequency of the oscillating signal, and the duration of the read signal feature can be calculated from the frequency of the oscillating signal. The read signal feature can then be adjusted if needed.

公开(公告)号：US20220165317A1

公开(公告)日：2022-05-26

申请号：US17542203

申请日：2021-12-03

Applicant: STMICROELECTRONICS S.R.L. ,  STMICROELECTRONICS INTERNATIONAL N.V.

Inventor： Vivek TYAGI ,  Vikas RANA ,  Chantal AURICCHIO ,  Laura CAPECCHI

IPC: G11C7/12 ,  G11C7/06 ,  G11C11/4094 ,  G11C11/4091 ,  G11C7/22

Abstract: A read signal generator generates read signals to control read operations of a memory array. The read signal generator can be selectively controlled to generate an oscillating signal having a period that corresponds to a feature one of the read signals. The oscillating signal is passed to a frequency divider that divides the oscillating signal and provides the divided oscillating signal to an output pad. The frequency of the oscillating signal can be measured at the output pad. The frequency of the oscillating signal, and the duration of the read signal feature can be calculated from the frequency of the oscillating signal. The read signal feature can then be adjusted if needed.

公开(公告)号：US20210074340A1

公开(公告)日：2021-03-11

申请号：US17010704

申请日：2020-09-02

Applicant: STMICROELECTRONICS INTERNATIONAL N.V. ,  STMICROELECTRONICS S.R.L.

Inventor： Vivek TYAGI ,  Vikas RANA ,  Chantal AURICCHIO ,  Laura CAPECCHI

IPC: G11C7/12 ,  G11C7/06 ,  G11C7/22 ,  G11C11/4091 ,  G11C11/4094

Abstract: A read signal generator generates read signals to control read operations of a memory array. The read signal generator can be selectively controlled to generate an oscillating signal having a period that corresponds to a feature one of the read signals. The oscillating signal is passed to a frequency divider that divides the oscillating signal and provides the divided oscillating signal to an output pad. The frequency of the oscillating signal can be measured at the output pad. The frequency of the oscillating signal, and the duration of the read signal feature can be calculated from the frequency of the oscillating signal. The read signal feature can then be adjusted if needed.

公开(公告)号：US20230008272A1

公开(公告)日：2023-01-12

申请号：US17837377

申请日：2022-06-10

Applicant: STMicroelectronics International N.V.

Inventor： Vikas RANA ,  Vivek TYAGI

IPC: G11C29/12 ,  G11C29/18 ,  G11C29/44 ,  G11C29/52

Abstract: An integrated circuit die includes memory sectors, each memory sector including a memory array. The die includes a voltage regulator with a first transistor driven by an output voltage to thereby generate a gate voltage, the output voltage being generated based upon a difference between a constant current and a leakage current. A selection circuit selectively couples the gate voltage to a selected one of the plurality of memory sectors. A leakage detector circuit drives a second transistor with the output voltage to thereby generate a copy voltage based upon a difference between a variable current and a replica of the constant current, increases the variable current in response to the copy voltage being greater than the gate voltage, and asserts a leakage detection signal in response to the copy voltage being less than the gate voltage, the leakage detection signal indicating excess leakage within the memory array.