公开(公告)号：US11894432B2

公开(公告)日：2024-02-06

申请号：US17573449

申请日：2022-01-11

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Crocifisso Marco Antonio Renna ,  Antonio Landi ,  Brunella Cafra

IPC: H01L29/417 ,  H01L29/40 ,  H01L29/45 ,  H01L29/66 ,  H01L29/739

CPC classification number: H01L29/41708 ,  H01L29/401 ,  H01L29/456 ,  H01L29/66333 ,  H01L29/7395

Abstract: Various embodiments provide a vertical-conduction semiconductor device that includes: a silicon substrate having a front face and a rear face; a front-side structure arranged on the front face of the substrate, having at least one current-conduction region at the front face; and a back side metal structure, arranged on the rear face of the substrate, in electrical contact with the substrate and constituted by a stack of metal layers. The back side metal structure is formed by: a first metal layer; a silicide region, interposed between the rear face of the substrate and the first metal layer and in electrical contact with the aforesaid rear face; and a second metal layer arranged on the first metal layer.