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1.发明申请Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity material 有权制造包括由高介电常数材料制成的栅极电介质的半导体器件的方法公开(公告)号：US20040256699A1
公开(公告)日：2004-12-23
申请号：US10815473
申请日：2004-04-01
Applicant: STMICROELECTRONICS SA
Inventor： Vincent Cosnier , Yves Morand , Olivier Kermarrec , Daniel Bensahel , Yves Campidelli
IPC: H01L021/336 , H01L031/117
CPC classification number: H01L21/28185 , H01L21/2807 , H01L21/28194 , H01L29/4925 , H01L29/51 , H01L29/517
Abstract: A process and a device for fabricating a semiconductor device having a gate dielectric made of high-k material, includes a step of depositing, directly on the gate dielectric, a first layer of Si1-xGex, where 0.5
Abstract translation: 用于制造具有由高k材料制成的栅极电介质的半导体器件的工艺和器件包括直接在栅极电介质上沉积第一层Si1-xGex的步骤，其中0.5
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