公开(公告)号：US20170062507A1

公开(公告)日：2017-03-02

申请号：US15050579

申请日：2016-02-23

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Axel CROCHERIE ,  Michel MARTY ,  Jean-Luc HUGUENIN ,  Sébastien JOUAN

IPC: H01L27/146

CPC classification number: H01L29/66977 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L2027/11892 ,  H04N2209/045

Abstract: An integrated image sensor may include adjacent pixels, with each pixel including an active semiconductor region including a photodiode, an antireflection layer above the photodiode, a dielectric region above the antireflection layer and an optical filter to pass incident luminous radiation having a given wavelength. The antireflection layer may include an array of pads mutually separated by a dielectric material of the dielectric region. The array may be configured to allow simultaneous transmission of the incident luminous radiation and a diffraction of the incident luminous radiation producing diffracted radiations which have wavelengths below that of the incident radiation, and are attenuated with respect to the incident radiation.

Abstract translation: 集成图像传感器可以包括相邻像素，每个像素包括有源半导体区域，包括光电二极管，光电二极管上方的抗反射层，抗反射层上方的电介质区域和滤光器，以使具有给定波长的入射发光。 抗反射层可以包括由电介质区域的电介质材料相互分离的衬垫阵列。 阵列可以被配置为允许入射的发光的同时透射和入射的发光的衍射产生具有低于入射辐射的波长的衍射辐射，并且相对于入射辐射被衰减。