公开(公告)号：US08980747B2

公开(公告)日：2015-03-17

申请号：US14023255

申请日：2013-09-10

Applicant: STMicroelectronics, Inc.

Inventor： Craig J. Rotay ,  John C. Pritiskutch

IPC: H01L21/445 ,  H01L21/48 ,  H01L23/495 ,  H01L23/00

CPC classification number: H01L21/4821 ,  H01L23/49517 ,  H01L23/49582 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Pre-migration of metal ions is achieved in a controlled manner to form a migrated metalover which an inhibitor is applied to prevent further migration. In a semiconductor circuit, pre-migration of metal ions is achieved by exposing a joined metal system to water, oxygen and an electrical field in a controlled manner. Conductors, joined to electrically isolating materials, are exposed to electrical fields in such a manner as to form one or more anodes to corresponding cathodes, thus liberating metal ions.The metal ions are then allowed to migrate in a controlled manner from the anode toward the cathode to form a pre-migrated metal. Finally, an inhibitor is applied on top of the pre-migrated metal to prevent further migration.

Abstract translation: 以受控的方式实现金属离子的预迁移以形成迁移的金属离子，其中施加抑制剂以防止进一步迁移。 在半导体电路中，通过以受控的方式将接合的金属系统暴露于水，氧和电场来实现金属离子的预迁移。 连接到电绝缘材料的导体以这样的方式暴露于电场，以便形成一个或多个阳极到相应的阴极，从而释放金属离子。 然后允许金属离子以受控的方式从阳极朝向阴极迁移以形成预迁移的金属。 最后，将抑制剂施加在预迁移金属的顶部以防止进一步迁移。

公开(公告)号：US20140077346A1

公开(公告)日：2014-03-20

申请号：US14023255

申请日：2013-09-10

Applicant: STMicroelectronics, Inc.

Inventor： Craig J. Rotay ,  John C. Pritiskutch

IPC: H01L21/48 ,  H01L23/495

CPC classification number: H01L21/4821 ,  H01L23/49517 ,  H01L23/49582 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Pre-migration of metal ions is achieved in a controlled manner to form a migrated metalover which an inhibitor is applied to prevent further migration. In a semiconductor circuit, pre-migration of metal ions is achieved by exposing a joined metal system to water, oxygen and an electrical field in a controlled manner. Conductors, joined to electrically isolating materials, are exposed to electrical fields in such a manner as to form one or more anodes to corresponding cathodes, thus liberating metal ions. The metal ions are then allowed to migrate in a controlled manner from the anode toward the cathode to form a pre-migrated metal. Finally, an inhibitor is applied on top of the pre-migrated metal to prevent further migration.

Abstract translation: 以受控的方式实现金属离子的预迁移以形成迁移的金属离子，其中施加抑制剂以防止进一步迁移。 在半导体电路中，通过以受控的方式将接合的金属系统暴露于水，氧和电场来实现金属离子的预迁移。 连接到电绝缘材料的导体以这样的方式暴露于电场，以便形成一个或多个阳极到相应的阴极，从而释放金属离子。 然后允许金属离子以受控的方式从阳极朝向阴极迁移以形成预迁移的金属。 最后，将抑制剂施加在预迁移金属的顶部以防止进一步迁移。

公开(公告)号：US09917040B1

公开(公告)日：2018-03-13

申请号：US15375314

申请日：2016-12-12

Applicant: STMicroelectronics, Inc.

Inventor： Craig J. Rotay

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/36 ,  H01L23/047 ,  H01L23/10 ,  H01L23/49541 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

Abstract: A package is formed by a thermal base and a leadframe assembly. The thermal base includes a body of thermally conductive material having a top surface, wherein the top surface of the body includes a pedestal. An integrated circuit chip is mounted to the pedestal, the integrated circuit chip including bonding pads. The leadframe assembly includes leads and an encapsulant ring that partially embeds the leads. The leadframe assembly is mounted to the top surface of said body surrounding the pedestal. The pedestal is configured with a thickness that positions the bonding pad at a height substantially coplanar with the leads. Bonding wires extend from the bonding pads to the leads with a shortened length so as to provide for improved electrical characteristics of frequency response, impedance and inductance.