公开(公告)号：US20040217447A1

公开(公告)日：2004-11-04

申请号：US10726264

申请日：2003-12-02

Applicant: STMicroelectronics, S.r.I

Inventor： Alessio M. D'arrigo Guiseppe ,  Rosario C. Spinella ,  Guiseppe Arena ,  Simona Lorenti

IPC: H01L029/00

CPC classification number: B81C1/00507 ,  G01N27/447 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/76264 ,  H01L21/76289 ,  H01L21/764

Abstract: A process is presented for realizing buried microchannels (10) in an integrated structure (1) comprising a monocrystalline silicon substrate (2). The process forms in the substrate (2) at least one trench (4). A microchannel (10) is obtained starting from a small surface port of the trench (4) by anisotropic etching of the trench. The microchannel (10) is then completely buried in the substrate (2) by growing a microcrystalline structure to enclose the small surface port.

Abstract translation: 提出了在包括单晶硅衬底（2）的集成结构（1）中实现埋入微通道（10）的过程。 该工艺在衬底（2）中形成至少一个沟槽（4）。 通过沟槽的各向异性蚀刻从沟槽（4）的小表面端口开始获得微通道（10）。 然后通过生长微晶结构以包围小表面端口将微通道（10）完全掩埋在衬底（2）中。