公开(公告)号：US20220320359A1

公开(公告)日：2022-10-06

申请号：US17848315

申请日：2022-06-23

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Arnaud TOURNIER ,  Boris RODRIGUES GONCALVES ,  Francois ROY

IPC: H01L31/107 ,  H01L27/146

Abstract: An electronic device is provided that includes a photodiode. The photodiode includes a semiconductor region coupled to a node of application of a first voltage, and at least one semiconductor wall. The at least one semiconductor wall extends along at least a height of the photodiode and partially surrounds the semiconductor region.

公开(公告)号：US20200313023A1

公开(公告)日：2020-10-01

申请号：US16825298

申请日：2020-03-20

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Arnaud TOURNIER ,  Boris RODRIGUES GONCALVES ,  Francois ROY

IPC: H01L31/107 ,  H01L27/146

Abstract: An electronic device is provided that includes a photodiode. The photodiode includes a semiconductor region coupled to a node of application of a first voltage, and at least one semiconductor wall. The at least one semiconductor wall extends along at least a height of the photodiode and partially surrounds the semiconductor region.

公开(公告)号：US20200266310A1

公开(公告)日：2020-08-20

申请号：US16789997

申请日：2020-02-13

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Boris RODRIGUES GONCALVES ,  Arnaud TOURNIER

IPC: H01L31/0352

Abstract: A photodiode include a first substrate layer of a first dopant type and a second substrate layer of a second dopant type on top of the first substrate layer. Semiconductor walls are provided in a semiconductor substrate which includes the first and second substrate layers. The semiconductor walls include: two outer semiconductor walls and at least one inside semiconductor wall positioned between the two outer semiconductor walls. Each inside semiconductor wall is located between two semiconductor walls having longer length.

公开(公告)号：US20240170586A1

公开(公告)日：2024-05-23

申请号：US18426090

申请日：2024-01-29

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Arnaud TOURNIER ,  Boris RODRIGUES GONCALVES ,  Frederic LALANNE ,  Pascal FONTENEAU

IPC: H01L31/02 ,  H01L27/146

CPC classification number: H01L31/02019 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L31/02005 ,  H01L27/14643

Abstract: The present disclosure concerns a photodiode including at least one memory area, each memory area including at least two charge storage regions.

公开(公告)号：US20210193849A1

公开(公告)日：2021-06-24

申请号：US17125654

申请日：2020-12-17

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Arnaud TOURNIER ,  Boris RODRIGUES GONCALVES ,  Frederic LALANNE ,  Pascal FONTENEAU

IPC: H01L31/02 ,  H01L27/146

Abstract: The present disclosure concerns a photodiode including at least one memory area, each memory area including at least two charge storage regions.