公开(公告)号：US20190229147A1

公开(公告)日：2019-07-25

申请号：US16251595

申请日：2019-01-18

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Yannick SANCHEZ ,  Emilie DELOFFRE

IPC: H01L27/146

Abstract: An image sensor manufacturing method includes forming a cavity in a first plate and mounting an active layer including both image sensing components and logic components to the first plate. The active layer is pressed against the first plate in a manner such that the image sensing components in the active layer are located on walls of the cavity and the logic components in the active layer are located outside of the cavity.

公开(公告)号：US20240162186A1

公开(公告)日：2024-05-16

申请号：US18389020

申请日：2023-11-13

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Sandrine LHOSTIS ,  Emilie DELOFFRE ,  Sebastien MERMOZ

IPC: H01L23/00 ,  H01L23/498

CPC classification number: H01L24/89 ,  H01L23/49827 ,  H01L24/27 ,  H01L23/49861 ,  H01L2224/27522 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2924/1431

Abstract: A first wafer includes a first semiconductor layer and first metal contacts on a side of a first surface of the first semiconductor layer. A second wafer includes a second semiconductor layer and second metal contacts on a side of a first surface of the second semiconductor layer. A handle is bonded onto a surface of the second wafer opposite to the second semiconductor layer. The second semiconductor layer is then removed to expose the second metal contacts. A bonding is then performed between the first and second wafers to electrically connect the first metal contacts to the second metal contacts.