公开(公告)号：US20190244989A1

公开(公告)日：2019-08-08

申请号：US16386826

申请日：2019-04-17

申请人： STMicroelectronics (Crolles 2) SAS

发明人： Daniel BENOIT ,  Olivier HINSINGER ,  Emmanuel GOURVEST

IPC分类号： H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14698

摘要： A back-side illuminated image sensor includes memory regions formed in a semiconductor wafer. Each memory region is located between two opaque walls which extend into the semiconductor wafer. An opaque screen is arranged at the rear surface of the memory region and in electrical contact with the opaque walls.