公开(公告)号：US20170186789A1

公开(公告)日：2017-06-29

申请号：US15096033

申请日：2016-04-11

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： François Roy ,  Helene Wehbe-Alause ,  Olivier Noblanc

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/1203 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689

Abstract: A back-side illuminated pixel including a semiconductor substrate of a first conductivity type coated, on the front side of the pixel, with a three-layer assembly successively including a first layer of the second conductivity type, an insulating layer, and a second semiconductor layer. The three-layer assembly is interrupted in a central portion of the pixel by a transfer region of the first conductivity type laterally delimited by an insulated conductive wall extending from the front surface, Transistors are formed in the second semiconductor layer.

公开(公告)号：US20180047770A1

公开(公告)日：2018-02-15

申请号：US15790432

申请日：2017-10-23

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： François Roy ,  Helene Wehbe-Alause ,  Olivier Noblanc

IPC: H01L27/146 ,  H01L27/12

CPC classification number: H01L27/14612 ,  H01L27/1203 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689

Abstract: A back-side illuminated pixel including a semiconductor substrate of a first conductivity type coated, on the front side of the pixel, with a three-layer assembly successively including a first layer of the second conductivity type, an insulating layer, and a second semiconductor layer. The three-layer assembly is interrupted in a central portion of the pixel by a transfer region of the first conductivity type laterally delimited by an insulated conductive wall extending from the front surface, Transistors are formed in the second semiconductor layer.

公开(公告)号：US10153312B2

公开(公告)日：2018-12-11

申请号：US15790432

申请日：2017-10-23

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： François Roy ,  Helene Wehbe-Alause ,  Olivier Noblanc

IPC: H01L27/146 ,  H01L27/12

Abstract: A back-side illuminated pixel including a semiconductor substrate of a first conductivity type coated, on the front side of the pixel, with a three-layer assembly successively including a first layer of the second conductivity type, an insulating layer, and a second semiconductor layer. The three-layer assembly is interrupted in a central portion of the pixel by a transfer region of the first conductivity type laterally delimited by an insulated conductive wall extending from the front surface, Transistors are formed in the second semiconductor layer.

公开(公告)号：US09825076B2

公开(公告)日：2017-11-21

申请号：US15096033

申请日：2016-04-11

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： François Roy ,  Helene Wehbe-Alause ,  Olivier Noblanc

IPC: H01L27/146 ,  H01L27/12

CPC classification number: H01L27/14612 ,  H01L27/1203 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689

Abstract: A back-side illuminated pixel including a semiconductor substrate of a first conductivity type coated, on the front side of the pixel, with a three-layer assembly successively including a first layer of the second conductivity type, an insulating layer, and a second semiconductor layer. The three-layer assembly is interrupted in a central portion of the pixel by a transfer region of the first conductivity type laterally delimited by an insulated conductive wall extending from the front surface, Transistors are formed in the second semiconductor layer.