公开(公告)号：US11754758B2

公开(公告)日：2023-09-12

申请号：US17482237

申请日：2021-09-22

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Vincent Farys ,  Alain Inard ,  Olivier Noblanc

IPC: G02B5/02 ,  C23C16/34 ,  C23C16/56 ,  C23C18/12

CPC classification number: G02B5/0263 ,  C23C16/345 ,  C23C16/56 ,  C23C18/1208 ,  G02B5/0236 ,  G02B5/0268

Abstract: Methods of manufacture of an optical diffuser. In one embodiment, an optical diffuser is formed by providing a wafer including a silicon slice of which an upper face is covered with a first layer made of a first material itself covered with a second layer made of a second selectively etchable material with respect to the first material. The method further includes forming openings in the second layer extending up to the first layer and filling the openings in the second layer with a third material. The method yet further includes bonding a glass substrate to the wafer on the side of its upper face and removing the silicon slice.

公开(公告)号：US10153312B2

公开(公告)日：2018-12-11

申请号：US15790432

申请日：2017-10-23

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： François Roy ,  Helene Wehbe-Alause ,  Olivier Noblanc

IPC: H01L27/146 ,  H01L27/12

Abstract: A back-side illuminated pixel including a semiconductor substrate of a first conductivity type coated, on the front side of the pixel, with a three-layer assembly successively including a first layer of the second conductivity type, an insulating layer, and a second semiconductor layer. The three-layer assembly is interrupted in a central portion of the pixel by a transfer region of the first conductivity type laterally delimited by an insulated conductive wall extending from the front surface, Transistors are formed in the second semiconductor layer.

公开(公告)号：US20180047770A1

公开(公告)日：2018-02-15

申请号：US15790432

申请日：2017-10-23

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： François Roy ,  Helene Wehbe-Alause ,  Olivier Noblanc

IPC: H01L27/146 ,  H01L27/12

CPC classification number: H01L27/14612 ,  H01L27/1203 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689

Abstract: A back-side illuminated pixel including a semiconductor substrate of a first conductivity type coated, on the front side of the pixel, with a three-layer assembly successively including a first layer of the second conductivity type, an insulating layer, and a second semiconductor layer. The three-layer assembly is interrupted in a central portion of the pixel by a transfer region of the first conductivity type laterally delimited by an insulated conductive wall extending from the front surface, Transistors are formed in the second semiconductor layer.

公开(公告)号：US11150388B2

公开(公告)日：2021-10-19

申请号：US15610150

申请日：2017-05-31

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Vincent Farys ,  Alain Inard ,  Olivier Noblanc

IPC: G02B5/02 ,  C23C16/34 ,  C23C16/56 ,  C23C18/12

Abstract: Methods of manufacture of an optical diffuser. In one embodiment, an optical diffuser is formed by providing a wafer including a silicon slice of which an upper face is covered with a first layer made of a first material itself covered with a second layer made of a second selectively etchable material with respect to the first material. The method further includes forming openings in the second layer extending up to the first layer and filling the openings in the second layer with a third material. The method yet further includes bonding a glass substrate to the wafer on the side of its upper face and removing the silicon slice.

公开(公告)号：US20170186789A1

公开(公告)日：2017-06-29

申请号：US15096033

申请日：2016-04-11

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： François Roy ,  Helene Wehbe-Alause ,  Olivier Noblanc

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/1203 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689

Abstract: A back-side illuminated pixel including a semiconductor substrate of a first conductivity type coated, on the front side of the pixel, with a three-layer assembly successively including a first layer of the second conductivity type, an insulating layer, and a second semiconductor layer. The three-layer assembly is interrupted in a central portion of the pixel by a transfer region of the first conductivity type laterally delimited by an insulated conductive wall extending from the front surface, Transistors are formed in the second semiconductor layer.

公开(公告)号：US09825076B2

公开(公告)日：2017-11-21

申请号：US15096033

申请日：2016-04-11

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： François Roy ,  Helene Wehbe-Alause ,  Olivier Noblanc

IPC: H01L27/146 ,  H01L27/12

CPC classification number: H01L27/14612 ,  H01L27/1203 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689

Abstract: A back-side illuminated pixel including a semiconductor substrate of a first conductivity type coated, on the front side of the pixel, with a three-layer assembly successively including a first layer of the second conductivity type, an insulating layer, and a second semiconductor layer. The three-layer assembly is interrupted in a central portion of the pixel by a transfer region of the first conductivity type laterally delimited by an insulated conductive wall extending from the front surface, Transistors are formed in the second semiconductor layer.