公开(公告)号：US20240178055A1

公开(公告)日：2024-05-30

申请号：US18509190

申请日：2023-11-14

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Thierno Moussa BAH ,  Pascal GOURAUD ,  Patrick GROS D'AILLON ,  Emilie PREVOST

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/306 ,  H01L21/768 ,  H01L29/94

CPC classification number: H01L21/76232 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/30617 ,  H01L21/30625 ,  H01L21/76831 ,  H01L29/945

Abstract: The present description concerns a method of manufacturing an insulating trench in a substrate, for an electronic device, comprising the following successive steps: (a) filling a trench formed in the substrate with a first insulating material; (b) depositing a first etch stop layer on the first material; (c) depositing a second layer of a second insulating material on the first etch stop layer; (d) etching down to the etch stop layer; and (e) depositing a third layer made of a third tight material.