公开(公告)号：US20220300624A1

公开(公告)日：2022-09-22

申请号：US17654914

申请日：2022-03-15

申请人： STMicroelectronics (Grenoble 2) SAS

发明人： Mark Trimmer

IPC分类号： G06F21/60

摘要： The present disclosure relates to a method wherein a random value, generated by a random number generator, is stored, by a finite state machine coupled to the generator by a first dedicated bus, in a memory area of a non-volatile fuse-type memory of an integrated circuit, the memory area being only accessible by the finite state machine.

公开(公告)号：US12117487B2

公开(公告)日：2024-10-15

申请号：US17654918

申请日：2022-03-15

申请人： STMicroelectronics (Grenoble 2) SAS

发明人： Mark Trimmer

IPC分类号： G06F12/14 ,  G01R31/317 ,  G01R31/3185 ,  G11C29/10 ,  G06F1/24 ,  G06F9/448 ,  G11C29/02 ,  G11C29/12 ,  G11C29/50 ,  G11C29/52 ,  G11C29/54

CPC分类号： G01R31/31719 ,  G01R31/318588 ,  G06F12/1458 ,  G11C29/10

摘要： The present disclosure relates to a method wherein a state of an integrated circuit between a first state (e.g., CLOSED), allowing a reading access to the first area of fuse-type non-volatile memory by a processor, and a second state (e.g., OPEN), forbidding the reading access to the memory to the processor, is conditioned to a verification, by a finite state machine, of values of a first fuse word of the memory, representative of a number of transitions to the first state and of a second fuse word of the memory, representative of a number of transitions to the second state.

公开(公告)号：US20220301649A1

公开(公告)日：2022-09-22

申请号：US17654918

申请日：2022-03-15

申请人： STMicroelectronics (Grenoble 2) SAS

发明人： Mark Trimmer

IPC分类号： G11C29/10

摘要： The present disclosure relates to a method wherein a state of an integrated circuit between a first state (e.g., CLOSED), allowing a reading access to the first area of fuse-type non-volatile memory by a processor, and a second state (e.g., OPEN), forbidding the reading access to the memory to the processor, is conditioned to a verification, by a finite state machine, of values of a first fuse word of the memory, representative of a number of transitions to the first state and of a second fuse word of the memory, representative of a number of transitions to the second state.