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公开(公告)号:US20240074134A1
公开(公告)日:2024-02-29
申请号:US18230952
申请日:2023-08-07
Applicant: STMicroelectronics (Rousset) SAS
Inventor: Paul DEVOGE , Abderrezak MARZAKI , Franck JULIEN , Alexandre MALHERBE
IPC: H10B10/00 , H01L29/66 , H01L29/788
CPC classification number: H10B10/12 , H01L29/66825 , H01L29/788
Abstract: An integrated circuit includes transistor. That transistor is manufactured using a process including the following steps: forming a first gate region; depositing dielectric layers accumulating on sides of the first gate region to form regions of spacers having a width; etching to remove a part of the deposited dielectric layers accumulated on the sides of the first gate region to reduce the width of the regions of spacers; performing a first implantation of dopants aligned on the regions of spacers to form first lightly doped conduction regions of the transistor; and performing a second implanting of dopants to form first more strongly doped conduction regions of the transistor.
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公开(公告)号:US20230223358A1
公开(公告)日:2023-07-13
申请号:US18094069
申请日:2023-01-06
Inventor: Carlos Augusto SUAREZ SEGOVIA , David PARKER , Chantal TROUILLER , Alexandre MALHERBE , Stephan NIEL
CPC classification number: H01L23/562 , H01L23/585 , H01L21/78
Abstract: Integrated circuits are supported by a semiconductor substrate wafer. Each integrated circuit includes an electrically active area. A thermally conductive protective structure is formed around the active areas of the various integrated circuits along scribe paths. The protective structure is located between the electrically active areas of the integrated circuits and a laser ablation area of the scribe paths. Separation of the integrated circuits is performed by scribing the semiconductor substrate wafer along the scribe paths. The process for scribing includes performing a laser ablation in the laser ablation area and then performing one of an etching or a physical scribing.
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