公开(公告)号：US20250040165A1

公开(公告)日：2025-01-30

申请号：US18911058

申请日：2024-10-09

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Arnaud REGNIER ,  Dann MORILLON ,  Franck JULIEN ,  Marjorie HESSE

IPC: H01L29/66 ,  H01L21/28 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786

Abstract: A MOS transistor including a substrate, a conductive having lateral walls, drain and source regions, and spacers having an upper surface such that the spacers are buried in the substrate and are position between the conductive gate and the drain and source regions is provided. The spacers are each cuboid-shaped and have a width that is constant along the spacers height and independent from a height of the conductive gate. A device including the MOS transistor and a method of manufacture for producing a right-hand portion and a left-hand portion of a MOS transistor is also provided.

公开(公告)号：US20210175346A1

公开(公告)日：2021-06-10

申请号：US17180197

申请日：2021-02-19

Applicant: STMICROELECTRONICS (ROUSSET) SAS

Inventor： Arnaud REGNIER ,  Dann MORILLON ,  Franck JULIEN ,  Marjorie HESSE

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/423 ,  H01L21/8234 ,  H01L29/786 ,  H01L29/417 ,  H01L21/28 ,  H01L21/84 ,  H01L29/78

Abstract: A method of manufacturing a MOS transistor includes forming a conductive first gate and forming insulating spacers along opposite sides of the gate, wherein the spacers are formed before the gate.

公开(公告)号：US20190207014A1

公开(公告)日：2019-07-04

申请号：US16228032

申请日：2018-12-20

Applicant: STMICROELECTRONICS (ROUSSET) SAS

Inventor： Arnaud REGNIER ,  Dann MORILLON ,  Franck JULIEN ,  Marjorie HESSE

IPC: H01L29/66 ,  H01L21/28 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423

CPC classification number: H01L29/66568 ,  H01L21/28114 ,  H01L21/28132 ,  H01L21/823468 ,  H01L21/84 ,  H01L27/1207 ,  H01L29/41775 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/6656 ,  H01L29/66659 ,  H01L29/7833 ,  H01L29/78654

Abstract: A method of manufacturing a MOS transistor includes forming a conductive first gate and forming insulating spacers along opposite sides of the gate, wherein the spacers are formed before the gate.