公开(公告)号：US20250120106A1

公开(公告)日：2025-04-10

申请号：US18905487

申请日：2024-10-03

Applicant: STMicroelectronics International N.V.

Inventor： Arnaud RIVAL ,  Alexis GAUTHIER ,  Edoardo BREZZA ,  Pascal CHEVALIER

IPC: H01L29/735 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66 ,  H01L29/737

Abstract: A method of making a bipolar transistor includes: forming a first collector part of a first conductivity type in a semiconductor layer; forming a first insulating region made of a first insulating material on the first collector part; forming a conduction layer intended to form a first doped base part of the second conductivity type on the first insulating region; forming an opening having a first width in the conduction layer that emerges onto the first insulating region; forming an insulating layer on the conduction layer and in the opening; forming a cavity in the insulating layer and in the first insulating region that emerges onto a portion of the first collector part through the opening, the cavity having at the level of the opening a second width smaller than the first width; and forming a second collector part in the cavity on the portion of the first collector part.