公开(公告)号：US20250120106A1

公开(公告)日：2025-04-10

申请号：US18905487

申请日：2024-10-03

Applicant: STMicroelectronics International N.V.

Inventor： Arnaud RIVAL ,  Alexis GAUTHIER ,  Edoardo BREZZA ,  Pascal CHEVALIER

IPC: H01L29/735 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66 ,  H01L29/737

Abstract: A method of making a bipolar transistor includes: forming a first collector part of a first conductivity type in a semiconductor layer; forming a first insulating region made of a first insulating material on the first collector part; forming a conduction layer intended to form a first doped base part of the second conductivity type on the first insulating region; forming an opening having a first width in the conduction layer that emerges onto the first insulating region; forming an insulating layer on the conduction layer and in the opening; forming a cavity in the insulating layer and in the first insulating region that emerges onto a portion of the first collector part through the opening, the cavity having at the level of the opening a second width smaller than the first width; and forming a second collector part in the cavity on the portion of the first collector part.

公开(公告)号：US20250113511A1

公开(公告)日：2025-04-03

申请号：US18903368

申请日：2024-10-01

Applicant: STMicroelectronics International N.V.

Inventor： Edoardo BREZZA ,  Alexis GAUTHIER

IPC: H01L29/66 ,  H01L21/764 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/737

Abstract: To manufacture a bipolar transistor, a first stack of layers including a first layer made of the material of the base of the bipolar transistor is formed between second and third insulating layers. A first cavity is then formed crossing the first stack in such a way as to reach the substrate. The forming of the first cavity includes an etching of no layer covering the first layer other than the third layer. A first portion of the collector of the bipolar transistor and a second portion of the base of the bipolar transistor are then formed in the first cavity.