公开(公告)号：US20250022509A1

公开(公告)日：2025-01-16

申请号：US18769493

申请日：2024-07-11

Applicant: STMicroelectronics International N.V.

Inventor： Francesco TOMAIUOLO ,  Marco RUTA ,  Michelangelo PISASALE ,  Marion Helne GRIMAL ,  Luigi BUONO ,  Antonino CONTE ,  Diego DE COSTANTINI ,  Marco Eugenio GIBILARO

IPC: G11C13/00

Abstract: A Phase Change Memory (PCM) device includes sets of cells in which a binary logic level is written by a write operation. Each cell is included in a respective set of cells in the sets of cells. The write operation includes: performing write verify operations on the cells to identify an actual logic level stored in the cells; checking if the identified actual logic level matches a certain the binary logic level; in response to the checking determining that in at least one cell the actual logic level fails to match the binary logic level, correcting the actual logic level to match the binary logic level by performing: a set write operation in case the binary logic level is a high logic level, or a reset write operation in case the binary logic level is a low logic level.