公开(公告)号：US20240429286A1

公开(公告)日：2024-12-26

申请号：US18341147

申请日：2023-06-26

Applicant: STMicroelectronics International N.V.

Inventor： Simone RASCUNA ,  Paolo BADALA ,  Gabriele BELLOCCHI ,  Valeria PUGLISI ,  Dario TENAGLIA

IPC: H01L29/16 ,  H01L29/40 ,  H01L29/45 ,  H01L29/47

Abstract: Various embodiments of the present disclosure disclose improved silicon carbide (SiC) power devices and methods of fabrication of such devices. A SiC power device includes a semiconductor base material with a first side and a second side and a first metallic layer disposed on the first side of the semiconductor base material that forms ohmic contacts and Schottky contacts. The SiC power device may be fabricated by forming a first metallic layer on a first side of a semiconductor base material to form a Schottky contact, forming a second metallic layer over the first metallic layer to form a reflective barrier covering the Schottky contact, removing one or more portions of the second metallic layer to expose a first portion of the first metallic layer, and forming silicide portions on the first metallic layer to form ohmic contacts within the Schottky contact.