公开(公告)号：US20240429286A1

公开(公告)日：2024-12-26

申请号：US18341147

申请日：2023-06-26

Applicant: STMicroelectronics International N.V.

Inventor： Simone RASCUNA ,  Paolo BADALA ,  Gabriele BELLOCCHI ,  Valeria PUGLISI ,  Dario TENAGLIA

IPC: H01L29/16 ,  H01L29/40 ,  H01L29/45 ,  H01L29/47

Abstract: Various embodiments of the present disclosure disclose improved silicon carbide (SiC) power devices and methods of fabrication of such devices. A SiC power device includes a semiconductor base material with a first side and a second side and a first metallic layer disposed on the first side of the semiconductor base material that forms ohmic contacts and Schottky contacts. The SiC power device may be fabricated by forming a first metallic layer on a first side of a semiconductor base material to form a Schottky contact, forming a second metallic layer over the first metallic layer to form a reflective barrier covering the Schottky contact, removing one or more portions of the second metallic layer to expose a first portion of the first metallic layer, and forming silicide portions on the first metallic layer to form ohmic contacts within the Schottky contact.

公开(公告)号：US20250107121A1

公开(公告)日：2025-03-27

申请号：US18889098

申请日：2024-09-18

Applicant: STMicroelectronics International N.V.

Inventor： Gabriele BELLOCCHI ,  Simone RASCUNÁ ,  Valeria PUGLISI ,  Paolo BADALÁ

IPC: H01L29/872 ,  H01L21/04 ,  H01L29/16 ,  H01L29/47 ,  H01L29/66

Abstract: Method of forming a metal-semiconductor contact, comprising the steps of: forming, on a semiconductor body having a first electrical conductivity, a first metal layer; performing a thermal treatment of at least a portion of the first metal layer by a LASER beam having an incidence direction on the first metal layer, including heating the portion of the first metal layer, along said incidence direction, at a temperature between 1500° C. and 3000° C.

公开(公告)号：US20250015145A1

公开(公告)日：2025-01-09

申请号：US18348012

申请日：2023-07-06

Applicant: STMicroelectronics International N.V.

Inventor： Simone RASCUNA' ,  Paolo BADALA' ,  Gabriele BELLOCCHI ,  Valeria PUGLISI

IPC: H01L29/40 ,  H01L29/45 ,  H01L29/66 ,  H01L29/872

Abstract: A method for forming an ohmic contact on a semiconductor component, for example a high-power electrical diode, is provided. An example method includes depositing a first metal layer on a top surface of a semiconductor drift layer having an electrical contact point, the first metal layer highly reflective of a laser light. The method further includes depositing a second metal layer on portions of the first metal layer aligned with the electrical contact point, the second metal layer selected to absorb the laser light. The method further includes exposing the first and the second metal layers to the laser light in a laser annealing process, causing the second metal layer to substantially increase in temperature due to the laser light. The increase in temperature of the second metal layer causing the ohmic contact to form between the electrical contact point and the first metal layer.

公开(公告)号：US20240178092A1

公开(公告)日：2024-05-30

申请号：US18505569

申请日：2023-11-09

Applicant: STMICROELECTRONICS INTERNATIONAL N.V.

Inventor： Gabriele BELLOCCHI ,  Simone RASCUNA' ,  Valeria PUGLISI

IPC: H01L23/31 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/872

CPC classification number: H01L23/3192 ,  H01L23/3171 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/872

Abstract: Electronic device, comprising: a solid body including a Silicon Carbide substrate, and further including an electrical terminal of the electronic device on the substrate; a passivation layer on the electrical terminal, of a first material; and a first adhesion improving layer coupled to the passivation layer and to the solid body, of a second material having predefined characteristics of adhesion to the first material, and configured to bond together the passivation layer and the solid body.