公开(公告)号：US20020081374A1

公开(公告)日：2002-06-27

申请号：US09902497

申请日：2002-01-15

Applicant: STMicroelectronics S.A.

Inventor： Didier Dutartre ,  Patrick Jerier

IPC: B05D005/12

CPC classification number: C30B29/06 ,  C23C16/24 ,  C30B25/20

Abstract: The present invention relates to a method of vapor phase epitaxial deposition of silicon on a silicon substrate including areas containing dopants at high concentration among which is arsenic, while avoiding an autodoping of the epitaxial layer by arsenic, including the steps of performing a first thin epitaxial deposition, then an anneal; the conditions and the duration of the first epitaxial deposition and of the anneal being such that the arsenic diffusion length is much lower than the thickness of the layer formed in the first deposition; and performing a second epitaxial deposition for a chosen duration to obtain a desired total thickness.

Abstract translation: 本发明涉及一种在硅基板上气相外延沉积硅的方法，该方法包括含有高浓度掺杂剂的区域，其中砷是砷，同时避免了砷的外延层的自掺杂，包括以下步骤：执行第一薄外延 沉积，然后退火; 第一外延沉积和退火的条件和持续时间使得砷扩散长度远低于在第一沉积中形成的层的厚度; 以及对所选择的持续时间进行第二外延沉积以获得期望的总厚度。