公开(公告)号：US20030173588A1

公开(公告)日：2003-09-18

申请号：US10339640

申请日：2003-01-09

Applicant: STMICROELECTRONICS S.A.

Inventor： Raul Andres Bianchi

IPC: H01L031/072

CPC classification number: G06F17/5036

Abstract: A system is provided for modeling an integrated circuit including at least one insulated-gate field-effect transistor. The system includes generator means for defining a parameter representing mechanical stresses applied to the active area of the transistor, and processing means for determining at least one of the electrical parameters of the transistor based at least partially on the stress parameter. Also provided is a method of modeling an integrated circuit including at least one insulated-gate field-effect transistor, and a method of producing an integrated circuit including at least one insulated-gate field-effect transistor.

公开(公告)号：US20020057092A1

公开(公告)日：2002-05-16

申请号：US09874896

申请日：2001-06-05

Applicant: STMicroelectronics S.A.

Inventor： Raul Andres Bianchi ,  Benoit Froment

IPC: G01R031/12

CPC classification number: H03M1/109 ,  H03M1/78

Abstract: A device includes a capacitive structure including an input node and n output nodes, r integrated capacitors connected in series between two adjacent nodes, an integrated capacitor connected between the input node and ground, an integrated capacitor connected between the nth output node and ground, and r capacitive branches connected in parallel between ground and each node of the capacitive structure including the first output node and the (nnull1)th output node. Each branch may include rnull1 series-connected integrated capacitors. Furthermore, the integrated capacitors of the capacitive structure are theoretically identical. The device may also include a charge source for charging each node of the capacitive structure. Additionally, a measurement circuit may measure the charge at each of the nodes of the structure, and a comparison circuit may compare each measured nodal charge value with a theoretical nodal charge value while taking into account a predetermined nodal tolerance.

Abstract translation: 一种器件包括电容结构，包括输入节点和n个输出节点，串联连接在两个相邻节点之间的r个集成电容器，连接在输入节点和地之间的集成电容器，连接在第n个输出节点和地之间的集成电容器，以及 r电容分支并联连接在包括第一输出节点和第（n-1）输出节点的电容结构的地与每个节点之间。 每个分支可以包括r + 1个串联的集成电容器。 此外，电容结构的集成电容在理论上是相同的。 该装置还可以包括用于为电容结构的每个节点充电的电荷源。 此外，测量电路可以测量结构的每个节点处的电荷，并且比较电路可以将每个测量的节点电荷值与理论节点电荷值进行比较，同时考虑预定的节点公差。