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1.发明申请Programming method for non volatile multilevel memory cells and corresponding programming circuit 失效非易失性多电平存储单元的编程方法及相应的编程电路公开(公告)号：US20040190336A1
公开(公告)日：2004-09-30
申请号：US10724023
申请日：2003-11-26
Applicant: STMicroelectronics S.r.I
Inventor： Emanuele Confalonieri , Antonio Geraci , Vincenzo Dima , Nicola Del Gatto
IPC: G11C011/34
CPC classification number: G11C16/3459 , G11C11/5628 , G11C16/3454 , G11C2211/5621
Abstract: A method for management of the programming controls in a multilevel device is provided. During the control step cells are not controlled all together but they are conveniently selected in order to reduce the source resistance and consumption effect, but without penalizing change times.
Abstract translation: 提供了一种用于管理多电平设备中的编程控制的方法。 在控制步骤期间，电池不能全部控制，但是它们方便地选择，以便降低电源电阻和消耗效应，但不影响变化时间。
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