公开(公告)号：US20030027429A1

公开(公告)日：2003-02-06

申请号：US10189152

申请日：2002-07-02

Applicant: STMicroelectronics S.r.I.

Inventor： Enrico Bellandi ,  Francesco Pipia ,  Mauro Alessandri

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/02071 ,  H01L21/02052 ,  H01L21/31116 ,  H01L21/76814

Abstract: The present invention relates to a process for removing post-etch residues or polymers from the surface of semiconductor devices which comprises treating the semiconductor device with an aqueous ammonia or ammonium hydroxide solution, optionally containing ozone for a time sufficient to effectively remove said post-etch residues or polymers from the surface of the semiconductor device and rinsing the semiconductor device with ozonized water, i.e. water enriched with ozone, in which water is preferably deionized (ozone-DIW).

Abstract translation: 本发明涉及用于从半导体器件表面去除蚀刻后残留物或聚合物的方法，该方法包括用氨水或氢氧化铵水溶液处理半导体器件，任选地含有臭氧足以有效去除所述后蚀刻 来自半导体器件表面的残留物或聚合物，并用臭氧化水（即，富含臭氧的水）漂洗半导体器件，其中水优选为去离子水（臭氧-DIW）。