公开(公告)号：US20020119616A1

公开(公告)日：2002-08-29

申请号：US10123507

申请日：2002-04-15

Applicant: STMicroelectronics S.r.I.

Inventor： Livio Baldi ,  Alfonso Maurelli

IPC: H01L021/8234 ,  H01L021/8244

CPC classification number: H01L27/11526 ,  H01L27/105 ,  H01L27/11539 ,  H01L27/11546

Abstract: A method of manufacturing an integrated semiconductor device having at least one non-volatile floating gate memory cell and at least one logic transistor. The method includes growing a first gate oxide layer over a silicon substrate, depositing a first polysilicon layer over the first gate oxide layer, selectively etching and removing the first polysilicon layer in order to define the floating gate of the memory cell, introducing dopant in order to obtain source and drain regions of the memory cell, depositing a dielectric layer, selectively etching and removing the dielectric layer and the first polysilicon layer in a region wherein the logic transistor will be formed, depositing a second polysilicon layer, selectively etching and removing the second polysilicon layer in order to define the gate of the logic transistor and the control gate of the memory cell. Between selectively etching the dielectric and depositing a second polysilicon layer, a first sub-step of removing the first gate oxide layer in the region for the logic transistor, and a second sub-step of growing a second oxide gate layer over the region, the second gate oxide layer having a different thickness than the first gate oxide layer.