Voltage boost device and memory system
    1.
    发明申请
    Voltage boost device and memory system 有权
    升压装置和存储器系统

    公开(公告)号:US20040136242A1

    公开(公告)日:2004-07-15

    申请号:US10614693

    申请日:2003-07-07

    CPC classification number: G11C16/12 G11C5/145 G11C8/08 G11C2207/2227

    Abstract: Voltage booster device (3) such as to selectively assume an active status and a stand-by status, said device comprising: a first terminal (15) such as to assume a respective electric potential and associated to a first capacitor (16), a second terminal (10) associated to a second capacitor (11) and selectively connectable to the first terminal (15), characterised in that it also comprises circuital means (100) for discharging the first capacitor thus reducing in module the electrical potential of the first terminal (15), the circuital means being activated to functioning when said device in the stand-by status and the second terminal (10) is disconnected from said first terminal (15).

    Abstract translation: 电压升压装置(3),例如选择性地呈现活动状态和待机状态,所述装置包括:第一端子(15),以便呈现相应的电位并与第一电容器(16)相关联, 与第二电容器(11)相关并且可选择地连接到第一端子(15)的第二端子(10),其特征在于,其还包括用于对第一电容器进行放电的电路装置(100),从而减少模块中的第一电容器 当所述处于待机状态的设备和所述第二终端(10)与所述第一终端(15)断开连接时,所述电路装置被激活以起作用。

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