公开(公告)号：US20140300005A1

公开(公告)日：2014-10-09

申请号：US14304111

申请日：2014-06-13

Applicant: STMicroelectronics S.r.I.

Inventor： Antonio Di Franco ,  Marco Bonifacio ,  Silvio Cristofalo

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76877 ,  H01L21/02274 ,  H01L21/76801 ,  H01L21/76804 ,  H01L21/76805 ,  H01L21/76819 ,  H01L21/76837 ,  H01L23/481 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A multilevel interconnect structure for a semiconductor device includes an intermetal dielectric layer with funnel-shaped connecting vias. The funnel-shaped connecting vias are provided in connection with systems exhibiting submicron spacings. The architecture of the multilevel interconnect structure provides a low resistance connecting via.