公开(公告)号：US09899508B1

公开(公告)日：2018-02-20

申请号：US15289828

申请日：2016-10-10

Applicant: STMicroelectronics S.r.l.

Inventor： Antonino Schillaci ,  Paola Maria Ponzio ,  Alessandro Angelo Alfio Palazzo

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/265 ,  H01L29/10 ,  H01L29/08

CPC classification number: H01L29/7802 ,  H01L21/265 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/1095 ,  H01L29/66545 ,  H01L29/66712

Abstract: Embodiments are directed to super-junction semiconductor devices having an inactive region positioned between active cells. In one embodiment, a semiconductor device is provided that includes a substrate and a drain region on the substrate. The drain region has a first conductivity type. A plurality of first columns is disposed on the drain region, with the first columns having the first conductivity type. A plurality of second columns is disposed on the drain region, with the second columns having a second conductivity type. The first and second columns are alternately arranged such that each of the second columns is positioned between respective first columns. First and second gate structures are included that overlie respective first columns, and a body region is included that has the second conductivity type. The body region abuts at least two second columns and at least one first column positioned between the at least two second columns.