公开(公告)号：US12255233B2

公开(公告)日：2025-03-18

申请号：US17579474

申请日：2022-01-19

Applicant: STMicroelectronics S.r.l.

Inventor： Mario Giuseppe Saggio ,  Alessia Maria Frazzetto ,  Edoardo Zanetti ,  Alfio Guarnera

IPC: H01L21/00 ,  H01L21/04 ,  H01L29/08 ,  H01L29/10 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

Abstract: A vertical conduction MOSFET device includes a body of silicon carbide having a first conductivity type and a face. A metallization region extends on the face of the body. A body region of a second conductivity type extends in the body, from the face of the body, along a first direction parallel to the face and along a second direction transverse to the face. A source region of the first conductivity type extends towards the inside of the body region, from the face of the body. The source region has a first portion and a second portion. The first portion has a first doping level and extends in direct electrical contact with the metallization region. The second portion has a second doping level and extends in direct electrical contact with the first portion of the source region. The second doping level is lower than the first doping level.