公开(公告)号：US20220384211A1

公开(公告)日：2022-12-01

申请号：US17752503

申请日：2022-05-24

Applicant: STMicroelectronics S.r.l.

Inventor： Andrea ALBERTINETTI

IPC: H01L21/56 ,  H01L23/544

Abstract: One or more semiconductor dice are arranged on a substrate. The semiconductor die or dice have a first surface adjacent the substrate and a second surface facing away from the substrate. Laser-induced forward transfer (LIFT) processing is applied to the semiconductor die or dice to form fiducial markers on the second surface of the semiconductor die or dice. Laser direct structuring (LDS) material is molded onto the substrate. The fiducial markers on the second surface of the semiconductor die or dice are optically detectable at the surface of the LDS material. Laser beam processing is applied to the molded LDS material at spatial positions located as a function of the optically detected fiducial markers to provide electrically conductive formations for the semiconductor die or dice.

公开(公告)号：US20220068788A1

公开(公告)日：2022-03-03

申请号：US17412007

申请日：2021-08-25

Applicant: STMicroelectronics S.r.l. ,  STMicroelectronics SDN BHD

Inventor： Andrea ALBERTINETTI ,  Marifi Corregidor CAGUD

IPC: H01L23/498 ,  H01L23/00

Abstract: A warped semiconductor die is attached onto a substrate such as a leadframe by dispensing a first mass of die attach material onto an area of the substrate followed by dispensing a second mass of die attach material so that the second mass of die attach material provides a raised formation of die attach material. For instance, the second mass may be deposited centrally of the first mass. The semiconductor die is placed onto the first and second mass of die attach material with its concave/convex shape matching the distribution of the die attach material thus effectively countering undesired entrapment of air.

公开(公告)号：US20230035470A1

公开(公告)日：2023-02-02

申请号：US17872774

申请日：2022-07-25

Applicant: STMicroelectronics S.r.l.

Inventor： Andrea ALBERTINETTI ,  Mirko ALESI

IPC: H01L23/495 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56

Abstract: An encapsulation of laser direct structuring (LDS) material is molded onto a substrate having first and second semiconductor dice arranged thereon. Laser beam energy is applied to a surface of the encapsulation of LDS material to structure therein die vias extending through the LDS material to the first and second semiconductor dice and a die-to-die line extending at surface of the LDS material between die vias. Laser-induced forward transfer (LIFT) processing is applied to transfer electrically conductive material to the die vias and the die-to-die line extending between die vias. A layer of electrically conductive material electroless grown onto the die vias and the die-to-die line facilitates improved adhesion of the electrically conductive material transferred via LIFT processing.

公开(公告)号：US20240120267A1

公开(公告)日：2024-04-11

申请号：US18390544

申请日：2023-12-20

Applicant: STMicroelectronics S.r.l. ,  STMicroelectronics SDN BHD

Inventor： Andrea ALBERTINETTI ,  Marifi Corregidor CAGUD

IPC: H01L23/498 ,  H01L23/00

CPC classification number: H01L23/49838 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/2732 ,  H01L2224/29019 ,  H01L2224/83192

Abstract: A warped semiconductor die is attached onto a substrate such as a leadframe by dispensing a first mass of die attach material onto an area of the substrate followed by dispensing a second mass of die attach material so that the second mass of die attach material provides a raised formation of die attach material. For instance, the second mass may be deposited centrally of the first mass. The semiconductor die is placed onto the first and second mass of die attach material with its concave/convex shape matching the distribution of the die attach material thus effectively countering undesired entrapment of air.