公开(公告)号：US11990435B2

公开(公告)日：2024-05-21

申请号：US17867287

申请日：2022-07-18

申请人： Amkor Technology Singapore Holding Pte. Ltd.

发明人： Sung Sun Park ,  Ji Young Chung ,  Christopher Berry

IPC分类号： G06V40/13 ,  B81C3/00 ,  H01L23/00 ,  H01L23/053 ,  H01L23/31

CPC分类号： H01L24/05 ,  B81C3/00 ,  G06V40/13 ,  G06V40/1329 ,  H01L23/053 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L23/3128 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/27 ,  H01L24/29 ,  H01L24/33 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05684 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/16227 ,  H01L2224/27312 ,  H01L2224/2732 ,  H01L2224/27622 ,  H01L2224/2784 ,  H01L2224/29006 ,  H01L2224/29007 ,  H01L2224/29011 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/29299 ,  H01L2224/2939 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/8146 ,  H01L2224/81464 ,  H01L2224/81466 ,  H01L2224/81471 ,  H01L2224/81484 ,  H01L2224/81815 ,  H01L2224/8185 ,  H01L2224/83101 ,  H01L2224/83102 ,  H01L2224/83192 ,  H01L2224/9211 ,  H01L2224/92125 ,  H01L2224/92225 ,  H01L2924/014 ,  H01L2924/1815 ,  H01L2924/18161 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/01082 ,  H01L2224/13111 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2224/13111 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2224/13111 ,  H01L2924/01029 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2224/13111 ,  H01L2924/01079 ,  H01L2224/13111 ,  H01L2924/01083 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2924/01083 ,  H01L2224/13111 ,  H01L2924/0103 ,  H01L2224/13111 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2224/11334 ,  H01L2924/00014 ,  H01L2224/1146 ,  H01L2924/00014 ,  H01L2224/1132 ,  H01L2924/00014 ,  H01L2224/11849 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2224/0345 ,  H01L2924/00014 ,  H01L2224/03464 ,  H01L2924/00014 ,  H01L2224/03452 ,  H01L2924/00014 ,  H01L2224/05147 ,  H01L2924/00014 ,  H01L2224/05124 ,  H01L2924/00014 ,  H01L2224/05139 ,  H01L2924/00014 ,  H01L2224/05144 ,  H01L2924/00014 ,  H01L2224/05155 ,  H01L2924/00014 ,  H01L2224/0347 ,  H01L2924/00014 ,  H01L2224/1147 ,  H01L2924/00014 ,  H01L2224/05666 ,  H01L2924/01074 ,  H01L2224/05671 ,  H01L2924/00014 ,  H01L2224/05666 ,  H01L2924/01028 ,  H01L2224/0361 ,  H01L2924/00014 ,  H01L2224/119 ,  H01L2224/034 ,  H01L2224/1147 ,  H01L2224/034 ,  H01L2224/114 ,  H01L2224/0361 ,  H01L2224/13294 ,  H01L2924/00014 ,  H01L2224/133 ,  H01L2924/014 ,  H01L2224/81203 ,  H01L2924/00014 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2224/2919 ,  H01L2924/0665 ,  H01L2224/2929 ,  H01L2924/0665 ,  H01L2224/2919 ,  H01L2924/07025 ,  H01L2224/2929 ,  H01L2924/07025 ,  H01L2224/2919 ,  H01L2924/069 ,  H01L2224/2929 ,  H01L2924/069 ,  H01L2224/83102 ,  H01L2924/00014 ,  H01L2224/83101 ,  H01L2924/00014 ,  H01L2224/9211 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/29294 ,  H01L2924/00014 ,  H01L2224/2939 ,  H01L2924/00014 ,  H01L2224/29299 ,  H01L2924/00014 ,  H01L2224/27622 ,  H01L2924/00014 ,  H01L2224/2732 ,  H01L2924/00014 ,  H01L2224/27312 ,  H01L2924/00014 ,  H01L2224/81447 ,  H01L2924/00014 ,  H01L2224/81424 ,  H01L2924/00014 ,  H01L2224/81455 ,  H01L2924/00014 ,  H01L2224/8146 ,  H01L2924/00014 ,  H01L2224/81439 ,  H01L2924/00014 ,  H01L2224/81464 ,  H01L2924/00014 ,  H01L2224/81484 ,  H01L2924/00014 ,  H01L2224/81444 ,  H01L2924/00014 ,  H01L2224/81466 ,  H01L2924/00014 ,  H01L2224/81471 ,  H01L2924/00014 ,  H01L2224/8185 ,  H01L2924/00012 ,  H01L2224/05166 ,  H01L2924/00014 ,  H01L2224/05684 ,  H01L2924/00014

摘要： A fingerprint sensor device and a method of making a fingerprint sensor device. As non-limiting examples, various aspects of this disclosure provide various fingerprint sensor devices, and methods of manufacturing thereof, that comprise a sensing area on a bottom side of a die without top side electrodes that senses fingerprints from the top side, and/or that comprise a sensor die directly electrically connected to conductive elements of a plate through which fingerprints are sensed.

公开(公告)号：US11887921B2

公开(公告)日：2024-01-30

申请号：US17412007

申请日：2021-08-25

申请人： STMicroelectronics S.r.l. ,  STMicroelectronics SDN BHD

发明人： Andrea Albertinetti ,  Marifi Corregidor Cagud

IPC分类号： H01L23/498 ,  H01L23/00

CPC分类号： H01L23/49838 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/2732 ,  H01L2224/29019 ,  H01L2224/83192

摘要： A warped semiconductor die is attached onto a substrate such as a leadframe by dispensing a first mass of die attach material onto an area of the substrate followed by dispensing a second mass of die attach material so that the second mass of die attach material provides a raised formation of die attach material. For instance, the second mass may be deposited centrally of the first mass. The semiconductor die is placed onto the first and second mass of die attach material with its concave/convex shape matching the distribution of the die attach material thus effectively countering undesired entrapment of air.

公开(公告)号：US11735545B2

公开(公告)日：2023-08-22

申请号：US17365634

申请日：2021-07-01

申请人： VueReal Inc.

发明人： Gholamreza Chaji ,  Ehsanollah Fathi

IPC分类号： H01L21/683 ,  H01L23/00 ,  H01L21/687 ,  H01L25/00 ,  G01R31/26 ,  H01L21/66 ,  H05K13/04

CPC分类号： H01L24/08 ,  H01L21/68714 ,  H01L24/29 ,  H01L24/83 ,  H01L24/95 ,  H01L24/97 ,  G01R31/2635 ,  H01L21/6831 ,  H01L21/6835 ,  H01L22/14 ,  H01L22/20 ,  H01L24/27 ,  H01L24/32 ,  H01L24/75 ,  H01L25/50 ,  H01L2221/68322 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/08238 ,  H01L2224/27002 ,  H01L2224/2732 ,  H01L2224/27334 ,  H01L2224/29006 ,  H01L2224/29011 ,  H01L2224/29019 ,  H01L2224/2919 ,  H01L2224/29026 ,  H01L2224/29078 ,  H01L2224/32237 ,  H01L2224/7598 ,  H01L2224/75252 ,  H01L2224/75253 ,  H01L2224/83005 ,  H01L2224/8314 ,  H01L2224/8316 ,  H01L2224/8318 ,  H01L2224/83121 ,  H01L2224/83141 ,  H01L2224/83143 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83234 ,  H01L2224/83238 ,  H01L2224/83862 ,  H01L2224/83902 ,  H01L2224/95 ,  H01L2224/95001 ,  H01L2224/97 ,  H05K13/0411

摘要： A method of selectively transferring micro devices from a donor substrate to contact pads on a receiver substrate. Micro devices being attached to a donor substrate with a donor force. The donor substrate and receiver substrate are aligned and brought together so that selected micro devices meet corresponding contact pads. A receiver force is generated to hold selected micro devices to the contact pads on the receiver substrate. The donor force is weakened and the substrates are moved apart leaving selected micro devices on the receiver substrate. Several methods of generating the receiver force are disclosed, including adhesive, mechanical and electrostatic techniques.

公开(公告)号：US11728306B2

公开(公告)日：2023-08-15

申请号：US17569893

申请日：2022-01-06

申请人： VueReal Inc.

发明人： Gholamreza Chaji ,  Ehsanollah Fathi

IPC分类号： H01L23/00 ,  H01L21/687 ,  H01L25/00 ,  G01R31/26 ,  H01L21/683 ,  H01L21/66 ,  H05K13/04

CPC分类号： H01L24/08 ,  H01L21/68714 ,  H01L24/29 ,  H01L24/83 ,  H01L24/95 ,  H01L24/97 ,  G01R31/2635 ,  H01L21/6831 ,  H01L21/6835 ,  H01L22/14 ,  H01L22/20 ,  H01L24/27 ,  H01L24/32 ,  H01L24/75 ,  H01L25/50 ,  H01L2221/68322 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/08238 ,  H01L2224/27002 ,  H01L2224/2732 ,  H01L2224/27334 ,  H01L2224/29006 ,  H01L2224/29011 ,  H01L2224/29019 ,  H01L2224/2919 ,  H01L2224/29026 ,  H01L2224/29078 ,  H01L2224/32237 ,  H01L2224/7598 ,  H01L2224/75252 ,  H01L2224/75253 ,  H01L2224/83005 ,  H01L2224/8314 ,  H01L2224/8316 ,  H01L2224/8318 ,  H01L2224/83121 ,  H01L2224/83141 ,  H01L2224/83143 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83234 ,  H01L2224/83238 ,  H01L2224/83862 ,  H01L2224/83902 ,  H01L2224/95 ,  H01L2224/95001 ,  H01L2224/97 ,  H05K13/0411

摘要： A method of selectively transferring micro devices from a donor substrate to contact pads on a receiver substrate. Micro devices being attached to a donor substrate with a donor force. The donor substrate and receiver substrate are aligned and brought together so that selected micro devices meet corresponding contact pads. A receiver force is generated to hold selected micro devices to the contact pads on the receiver substrate. The donor force is weakened and the substrates are moved apart leaving selected micro devices on the receiver substrate. Several methods of generating the receiver force are disclosed, including adhesive, mechanical and electrostatic techniques.

公开(公告)号：US10020282B2

公开(公告)日：2018-07-10

申请号：US14395876

申请日：2013-04-24

申请人： NISSAN MOTOR CO., LTD. ,  Sanken Electric Co., Ltd.

发明人： Satoshi Tanimoto ,  Yusuke Zushi ,  Yoshinori Murakami ,  Kohei Matsui ,  Shinji Sato ,  Yu Fukushima

IPC分类号： H01L23/00 ,  B23K37/04 ,  H05K3/34 ,  H05K13/04

CPC分类号： H01L24/83 ,  B23K37/0426 ,  H01L24/05 ,  H01L24/29 ,  H01L24/75 ,  H01L24/97 ,  H01L2224/04026 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05639 ,  H01L2224/2732 ,  H01L2224/291 ,  H01L2224/29118 ,  H01L2224/29144 ,  H01L2224/75101 ,  H01L2224/75305 ,  H01L2224/7531 ,  H01L2224/75314 ,  H01L2224/75315 ,  H01L2224/75317 ,  H01L2224/7532 ,  H01L2224/75756 ,  H01L2224/7598 ,  H01L2224/75981 ,  H01L2224/83022 ,  H01L2224/83048 ,  H01L2224/83075 ,  H01L2224/83101 ,  H01L2224/832 ,  H01L2224/83211 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/97 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1037 ,  H01L2924/1067 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/3656 ,  H05K3/34 ,  H05K3/3431 ,  H05K13/0465 ,  H05K2203/0195 ,  H05K2203/0278 ,  H01L2924/00 ,  H01L2924/0542 ,  H01L2924/0103 ,  H01L2924/00014 ,  H01L2924/01042 ,  H01L2924/01032 ,  H01L2924/01014 ,  H01L2924/01013 ,  H01L2224/05655 ,  H01L2224/83 ,  H01L2924/00012

摘要： In a heat insulating load jig 11 of the present invention, a solder material 14 having a melting point or a solidus temperature in a range between a thermal resistance temperature of a semiconductor chip 13 and a temperature 100° C. below the thermal resistance temperature is interposed between a circuit board 12 and the semiconductor chip 13; a heat insulating body 17 is placed on an upper side of the semiconductor chip 13 in this state; a metal weight 16 is disposed on the heat insulating body 17; and load is applied to the semiconductor chip 13 while the solder material 14 is melted and solidified.

公开(公告)号：US09847235B2

公开(公告)日：2017-12-19

申请号：US14190952

申请日：2014-02-26

申请人： Infineon Technologies AG

发明人： Carsten von Koblinski ,  Ulrike Fastner ,  Andre Brockmeier ,  Peter Zorn

IPC分类号： H01L21/52 ,  H01L21/78 ,  H01L21/683 ,  H01L23/00 ,  H01L23/051 ,  H01L23/492 ,  H01L23/498 ,  H01L21/48 ,  H01L23/367

CPC分类号： H01L21/52 ,  H01L21/4803 ,  H01L21/683 ,  H01L21/78 ,  H01L23/051 ,  H01L23/3677 ,  H01L23/492 ,  H01L23/49861 ,  H01L24/19 ,  H01L24/20 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/0346 ,  H01L2224/2101 ,  H01L2224/214 ,  H01L2224/215 ,  H01L2224/221 ,  H01L2224/2732 ,  H01L2224/29011 ,  H01L2224/29188 ,  H01L2224/2919 ,  H01L2224/32105 ,  H01L2224/32111 ,  H01L2224/32155 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/82101 ,  H01L2224/82105 ,  H01L2224/82947 ,  H01L2224/83192 ,  H01L2224/83201 ,  H01L2224/9202 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/13055 ,  H01L2924/15156 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2924/0665 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2224/19 ,  H01L2224/83

摘要： A carrier substrate having a plurality of receptacles each for receiving and carrying a semiconductor chip is provided. Semiconductor chips are arranged in the receptacles, and metal is plated in the receptacles to form a metal structure on and in contact with the semiconductor chips. The carrier substrate is cut to form separate semiconductor devices.

公开(公告)号：US09818718B2

公开(公告)日：2017-11-14

申请号：US14394347

申请日：2013-08-20

申请人： KAKEN TECH CO., LTD.

发明人： Shigeo Hori ,  Hirohiko Furui ,  Akira Fujita

IPC分类号： B22F1/02 ,  H01L23/00 ,  H01B1/22 ,  B23K1/00 ,  B23K31/12 ,  B23K35/30 ,  B23K35/36 ,  B22F1/00 ,  B23K35/02 ,  B22F9/24

CPC分类号： H01L24/83 ,  B22F1/0051 ,  B22F1/0062 ,  B22F1/0074 ,  B22F9/24 ,  B23K1/0008 ,  B23K1/0016 ,  B23K31/12 ,  B23K35/025 ,  B23K35/3006 ,  B23K35/3613 ,  H01B1/22 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/04026 ,  H01L2224/05639 ,  H01L2224/27312 ,  H01L2224/27318 ,  H01L2224/2732 ,  H01L2224/27416 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/29387 ,  H01L2224/2939 ,  H01L2224/29395 ,  H01L2224/29439 ,  H01L2224/2949 ,  H01L2224/29499 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/8321 ,  H01L2224/8323 ,  H01L2224/83439 ,  H01L2224/8384 ,  H01L2924/01047 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/066

摘要： Provided are: a conductive paste in which sinterability of silver particles the conductive paste can be easily controlled by using silver particles having predetermined crystal transformation characteristics defined by an XRD analysis, and after a sintering treatment, excellent electrical conductivity and thermal conductivity can be stably obtained; and a die bonding method using the conductive paste.Disclosed is a conductive paste which includes silver particles having a volume average particle size of 0.1 to 30 μm as a sinterable conductive material, and a dispersing medium for making a paste-like form, and in which when the integrated intensity of the peak at 2θ=38°±0.2° in the X-ray diffraction chart obtainable by an XRD analysis before a sintering treatment of the silver particles is designated as S1, and the integrated intensity of the peak at 2θ=38°±0.2° in the X-ray diffraction chart obtainable by an XRD analysis after a sintering treatment (250° C., 60 minutes) of the silver particles is designated as S2, the value of S2/S1 is adjusted to a value within the range of 0.2 to 0.8.

公开(公告)号：US09779967B2

公开(公告)日：2017-10-03

申请号：US14854140

申请日：2015-09-15

申请人： Texas Instruments Incorporated

发明人： Juan A Herbsommer ,  Osvaldo J Lopez ,  Jonathan A Noquil

IPC分类号： H01L21/48 ,  H01L23/495 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L21/4825 ,  H01L21/563 ,  H01L23/3107 ,  H01L23/49537 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/19 ,  H01L24/20 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L2224/2101 ,  H01L2224/211 ,  H01L2224/215 ,  H01L2224/2732 ,  H01L2224/291 ,  H01L2224/29193 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32104 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2224/83815 ,  H01L2224/83851 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01028 ,  H01L2924/00

摘要： A power field-effect transistor package is fabricated. A leadframe including a flat plate and a coplanar flat strip spaced from the plate is provided. The plate has a first thickness and the strip has a second thickness smaller than the first thickness. A field-effect power transistor chip having a third thickness is provided. A first and second contact pad on one chip side and a third contact pad on the opposite chip side are created. The first pad is attached to the plate and the second pad to the strip. Terminals are concurrently attached to the plate and the strip so that the terminals are coplanar with the third contact pad. The thickness difference between plate and strip and spaces between chip and terminals is filled with an encapsulation compound having a surface coplanar with the plate and the opposite surface coplanar with the third pad and terminals. The chip, leadframe and terminals are integrated into a package having a thickness equal to the sum of the first and third thicknesses.

公开(公告)号：US09773766B2

公开(公告)日：2017-09-26

申请号：US14422152

申请日：2013-01-09

申请人： SANDISK SEMICONDUCTOR (SHANGHAI) CO., LTD. ,  SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD.

发明人： Ning Ye ,  Chin-Tien Chiu ,  Suresh Upadhyayula ,  Peng Fu ,  Zhong Lu ,  Cheeman Yu ,  Yuang Zhang ,  Li Wang ,  Pradeep Kumar Rai ,  Weili Wang ,  Enyong Tai ,  King Hoo Ong ,  Kim Lee Bock

IPC分类号： H01L23/00 ,  H01L25/00 ,  H01L25/16 ,  H01L25/18 ,  H01L23/14 ,  H01L23/538 ,  H01L23/31

CPC分类号： H01L25/18 ,  H01L23/145 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/5389 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/743 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L25/00 ,  H01L25/165 ,  H01L25/50 ,  H01L2224/05554 ,  H01L2224/27318 ,  H01L2224/2732 ,  H01L2224/27848 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32265 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2224/83986 ,  H01L2224/85986 ,  H01L2224/92247 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/12042 ,  H01L2924/1205 ,  H01L2924/1206 ,  H01L2924/1207 ,  H01L2924/143 ,  H01L2924/1438 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19103 ,  H01L2924/19105 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/00

摘要： A semiconductor package including a plurality of stacked semiconductor die, and methods of forming the semiconductor package, are disclosed. In order to ease wirebonding requirements on the controller die, the controller die may be mounted directly to the substrate in a flip chip arrangement requiring no wire bonds or footprint outside of the controller die. Thereafter, a spacer layer may be affixed to the substrate around the controller die to provide a level surface on which to mount one or more flash memory die. The spacer layer may be provided in a variety of different configurations.

公开(公告)号：US09754919B2

公开(公告)日：2017-09-05

申请号：US13931684

申请日：2013-06-28

申请人： Renesas Electronics Corporation

发明人： Hiroshi Kuroda ,  Hideo Koike

IPC分类号： H01L25/065 ,  H04B5/00 ,  H04B7/24 ,  H01L23/31 ,  H01L23/544 ,  H01L23/00 ,  H01L25/18

CPC分类号： H01L25/0657 ,  H01L23/3128 ,  H01L23/544 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/80 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/97 ,  H01L25/18 ,  H01L2223/5442 ,  H01L2223/54486 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/0612 ,  H01L2224/06177 ,  H01L2224/2732 ,  H01L2224/27334 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/4809 ,  H01L2224/48096 ,  H01L2224/48149 ,  H01L2224/48227 ,  H01L2224/48453 ,  H01L2224/48458 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/49173 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2224/85181 ,  H01L2224/85444 ,  H01L2224/92 ,  H01L2224/92147 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06531 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/1815 ,  H04B5/0075 ,  H04B7/24 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00012

摘要： Disclosed is a semiconductor device that is capable of handling multiple different high-frequency contactless communication modes and that is formed by a multi-chip structure. A first semiconductor chip, which performs interface control of high-frequency contactless communication and data processing of communications data, is mounted on a wiring board; and a second semiconductor chip, which performs another data processing of the communication data, is mounted on the first semiconductor chip. In this case, transmission pads in the first semiconductor chip are arranged at positions farther from a periphery of the chip than those of receiving pads, and the second semiconductor chip is mounted by being biased on the first semiconductor chip so as to keep away the transmission pads.