公开(公告)号：US20030002195A1

公开(公告)日：2003-01-02

申请号：US10161054

申请日：2002-05-30

Applicant: STMicroelectronics S.r.l

Inventor： Simone Sassolini ,  Benedetto Vigna

IPC: G11B021/02 ,  G11B005/00

CPC classification number: G11B5/6005 ,  G11B5/5552 ,  G11B5/5582

Abstract: In an actuator device for hard disks a suspension element carries a slider that is subject to undesired vibrations which give rise to rotations of the slider with respect to a nominal position. An electrostatically controlled position-control structure is arranged between the suspension and the slider and is controlled in an active way so as to generate torsions of the platform that counter the undesired rotations. The position-control structure comprises a platform of conductive material and control electrodes arranged underneath the platform. The platform is connected to a load-bearing structure by spring elements that enable movements of roll and pitch. Four control electrodes are arranged according to the quadrants of a square and can be selectively biased for generating electrical forces acting on the platform.

Abstract translation: 在用于硬盘的致动器装置中，悬挂元件承载滑动器，该滑块受到引起滑块相对于标称位置的旋转的不期望的振动。 静电控制的位置控制结构布置在悬架和滑块之间，并且以主动的方式被控制，以便产生平衡物的扭转以抵抗不需要的旋转。 位置控制结构包括布置在平台下方的导电材料和控制电极的平台。 平台通过弹簧元件连接到承载结构，使弹簧能够运动和俯仰。 根据正方形的象限布置四个控制电极，并且可以选择性地偏置以产生作用在平台上的电力。

公开(公告)号：US20040157364A1

公开(公告)日：2004-08-12

申请号：US10746868

申请日：2003-12-24

Applicant: STMicroelectronics S.r.l.

Inventor： Chantal Combi ,  Benedetto Vigna

IPC: H01L021/44

CPC classification number: H01H59/0009

Abstract: The method for manufacturing a micromechanical switch includes manufacturing a hanging bar, on a first semiconductor substrate, equipped at an end thereof with a contact electrode, and a frame projecting from the first semiconductor substrate. A second semiconductor substrate with conductive tracks includes a second input/output electrode and a third starting electrode, and first and second spacers electrically connected to the conductive tracks. The frame is abutted with the first spacers so that the fourth contact electrode abuts on the second input/output electrode in response to an electrical signal provided to the hanging bar by the third starting electrode.

Abstract translation: 微机电开关的制造方法包括在第一半导体基板上制造悬挂杆，第一半导体基板的一端配备有接触电极，以及从第一半导体基板突出的框架。 具有导电轨道的第二半导体衬底包括第二输入/输出电极和第三起始电极，以及电连接到导电轨道的第一和第二间隔件。 框架与第一间隔件邻接，使得第四接触电极响应于通过第三起动电极提供给吊杆的电信号而抵靠第二输入/输出电极。

公开(公告)号：US20020109419A1

公开(公告)日：2002-08-15

申请号：US10124781

申请日：2002-04-16

Applicant: STMicroelectronics S.r.l.

Inventor： Benedetto Vigna ,  Paolo Ferrari

IPC: H02K041/00

CPC classification number: H02N1/008 ,  G11B5/5552 ,  G11B21/106 ,  G11B21/21

Abstract: The method is intended for manufacturing a microintegrated structure, typically a microactuator for a hard-disk drive unit and includes the steps of: forming interconnection regions in a substrate of semiconductor material; forming a monocrystalline epitaxial region; forming lower sinker regions in the monocrystalline epitaxial region and in direct contact with the interconnection regions; forming insulating material regions on a structure portion of the monocrystalline epitaxial region; growing a pseudo-epitaxial region formed by a polycrystalline portion above the structure portion of the monocrystalline epitaxial region and elsewhere a monocrystalline portion; and forming upper sinker regions in the polycrystalline portion of the pseudo-epitaxial region and in direct contact with the lower sinker regions. In this way no PN junctions are present inside the polycrystalline portion of the pseudo-epitaxial region and the structure has a high breakdown voltage.

Abstract translation: 该方法旨在用于制造微集成结构，通常是用于硬盘驱动单元的微致动器，并且包括以下步骤：在半导体材料的衬底中形成互连区域; 形成单晶外延区; 在所述单晶外延区域中形成下沉陷区域并与所述互连区域直接接触; 在所述单晶外延区域的结构部分上形成绝缘材料区域; 生长由单晶外延区域的结构部分上方的多晶部分和其它单晶部分形成的伪外延区域; 以及在所述伪外延区域的多晶部分中形成上沉降区域并且与所述下沉部区域直接接触。 以这种方式，在伪外延区域的多晶部分内不存在PN结，并且该结构具有高的击穿电压。