公开(公告)号：US20040056275A1

公开(公告)日：2004-03-25

申请号：US10606660

申请日：2003-06-25

Applicant: STMicroelectronics S.r.l.

Inventor： Bruno Murari ,  Ubaldo Mastromatteo ,  Paolo Ferrari

IPC: H01L031/0328

CPC classification number: G02B27/0994

Abstract: A micromachined device made of semiconductor material is formed by: a semiconductor body; an intermediate layer set on top of the semiconductor body; and a substrate, set on top of the intermediate layer. A cavity extends in the intermediate layer and is delimited laterally by bottom fixed regions, at the top by the substrate, and at the bottom by the semiconductor body. The bottom fixed regions form fixed electrodes, which extend in the intermediate layer towards the inside of the cavity. An oscillating element is formed in the substrate above the cavity and is separated from top fixed regions through trenches, which extend throughout the thickness of the substrate. The oscillating element is formed by an oscillating platform set above the cavity, and by mobile electrodes, which extend towards the top fixed regions in a staggered way with respect to the fixed electrodes. The fixed electrodes and mobile electrodes are thus comb-fingered in plan view but formed on different levels.

Abstract translation: 由半导体材料制成的微机械加工装置由半导体本体形成， 设置在半导体本体顶部的中间层; 以及设置在中间层顶部的基板。 空腔在中间层中延伸并且由底部固定区域在顶部限定，在顶部由衬底限定，并且在底部由半导体本体限定。 底部固定区域形成固定电极，其在中间层中延伸到空腔的内部。 振荡元件形成在空腔上方的衬底中，并且通过沟槽与顶部固定区域分离，其延伸贯穿衬底的厚度。 振荡元件由设置在空腔上方的振荡平台和通过相对于固定电极以交错方式朝着顶部固定区域延伸的移动电极形成。 因此，固定电极和移动电极在平面图中梳理，但形成在不同的水平上。

公开(公告)号：US20020109419A1

公开(公告)日：2002-08-15

申请号：US10124781

申请日：2002-04-16

Applicant: STMicroelectronics S.r.l.

Inventor： Benedetto Vigna ,  Paolo Ferrari

IPC: H02K041/00

CPC classification number: H02N1/008 ,  G11B5/5552 ,  G11B21/106 ,  G11B21/21

Abstract: The method is intended for manufacturing a microintegrated structure, typically a microactuator for a hard-disk drive unit and includes the steps of: forming interconnection regions in a substrate of semiconductor material; forming a monocrystalline epitaxial region; forming lower sinker regions in the monocrystalline epitaxial region and in direct contact with the interconnection regions; forming insulating material regions on a structure portion of the monocrystalline epitaxial region; growing a pseudo-epitaxial region formed by a polycrystalline portion above the structure portion of the monocrystalline epitaxial region and elsewhere a monocrystalline portion; and forming upper sinker regions in the polycrystalline portion of the pseudo-epitaxial region and in direct contact with the lower sinker regions. In this way no PN junctions are present inside the polycrystalline portion of the pseudo-epitaxial region and the structure has a high breakdown voltage.

Abstract translation: 该方法旨在用于制造微集成结构，通常是用于硬盘驱动单元的微致动器，并且包括以下步骤：在半导体材料的衬底中形成互连区域; 形成单晶外延区; 在所述单晶外延区域中形成下沉陷区域并与所述互连区域直接接触; 在所述单晶外延区域的结构部分上形成绝缘材料区域; 生长由单晶外延区域的结构部分上方的多晶部分和其它单晶部分形成的伪外延区域; 以及在所述伪外延区域的多晶部分中形成上沉降区域并且与所述下沉部区域直接接触。 以这种方式，在伪外延区域的多晶部分内不存在PN结，并且该结构具有高的击穿电压。