公开(公告)号：US20230170022A1

公开(公告)日：2023-06-01

申请号：US17993118

申请日：2022-11-23

Applicant: STMicroelectronics S.r.l.

Inventor： Elisa PETRONI ,  Andrea REDAELLI

IPC: G11C13/00 ,  H10N70/00 ,  H10N70/20

CPC classification number: G11C13/0069 ,  H01L45/126 ,  H01L45/144 ,  H01L45/06

Abstract: A phase change memory element has a memory region, a first electrode and a second electrode. The memory region is arranged between the first and the second electrodes and has a bulk zone and an active zone. The memory region is made of a germanium, antimony and tellurium based alloy, wherein germanium is in a higher percentage than antimony and tellurium in the bulk zone of the memory region. The active zone is configured to switch between a first stable state associated with a first memory logic level and a second stable state associated with a second memory logic level. The active zone has, in the first stable state, a uniform, amorphous structure and, in the second stable state, a differential polycrystalline structure including a first portion, having a first stoichiometry, and a second portion, having a second stoichiometry different from the first stoichiometry.