公开(公告)号：US10978146B2

公开(公告)日：2021-04-13

申请号：US16662911

申请日：2019-10-24

申请人： STMicroelectronics S.r.l.

发明人： Marco Pasotti ,  Riccardo Zurla ,  Alessandro Cabrini ,  Guido Torelli ,  Flavio Giovanni Volpe

IPC分类号： G11C11/00 ,  G11C13/00

摘要： A phase-change memory device, comprising: a memory array of PCM cells, a variable current generator, and a sense amplifier. The current generator comprises a reference array of PCM cells programmed in SET resistance state. The phase-change memory device further comprises a decoder for addressing each cell of the reference array so that a respective plurality of SET current signals is generated through the plurality of reference cells; and a controller configured to receive at input said SET current signals, select a number of SET current signals having the lowest current values among the plurality of SET current signals, calculate a mean value of said lowest current values, and adjust the reference current to be lower than said mean value.