Single-ended phase-change memory device and reading method

    公开(公告)号:US10978146B2

    公开(公告)日:2021-04-13

    申请号:US16662911

    申请日:2019-10-24

    IPC分类号: G11C11/00 G11C13/00

    摘要: A phase-change memory device, comprising: a memory array of PCM cells, a variable current generator, and a sense amplifier. The current generator comprises a reference array of PCM cells programmed in SET resistance state. The phase-change memory device further comprises a decoder for addressing each cell of the reference array so that a respective plurality of SET current signals is generated through the plurality of reference cells; and a controller configured to receive at input said SET current signals, select a number of SET current signals having the lowest current values among the plurality of SET current signals, calculate a mean value of said lowest current values, and adjust the reference current to be lower than said mean value.