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公开(公告)号:US09893689B2
公开(公告)日:2018-02-13
申请号:US15192863
申请日:2016-06-24
CPC分类号: H03F1/14 , H03F1/083 , H03F1/086 , H03F3/45 , H03F3/45174 , H03F3/45183 , H03F3/45475 , H03F2200/375 , H03F2203/45138 , H03F2203/45222
摘要: According to an embodiment, an operational amplifier includes a first amplifier stage coupled between an input node and an intermediate node, a second amplifier stage coupled between the intermediate node and an output node, a compensation capacitor having a first terminal coupled to the intermediate node and a second terminal, and a compensation amplifier coupled between the output node and the second terminal. The compensation amplifier has a positive gain greater than one.
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公开(公告)号:US10978146B2
公开(公告)日:2021-04-13
申请号:US16662911
申请日:2019-10-24
摘要: A phase-change memory device, comprising: a memory array of PCM cells, a variable current generator, and a sense amplifier. The current generator comprises a reference array of PCM cells programmed in SET resistance state. The phase-change memory device further comprises a decoder for addressing each cell of the reference array so that a respective plurality of SET current signals is generated through the plurality of reference cells; and a controller configured to receive at input said SET current signals, select a number of SET current signals having the lowest current values among the plurality of SET current signals, calculate a mean value of said lowest current values, and adjust the reference current to be lower than said mean value.
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