公开(公告)号：US20240348249A1

公开(公告)日：2024-10-17

申请号：US18630493

申请日：2024-04-09

Applicant: STMicroelectronics S.r.l.

Inventor： Francesco PINZIN ,  Alessandro BERTOLINI ,  Alberto CATTANI

IPC: H03K17/687 ,  H02M1/088 ,  H02M3/157 ,  H02M3/158

CPC classification number: H03K17/6871 ,  H02M1/088 ,  H02M3/157 ,  H02M3/158

Abstract: A power MOSFET driver circuit includes a feedback circuit configured to supply a feedback signal that signals when a gate voltage of the power MOSFET crosses a plateau value and the power MOSFET switches conduction state. The feedback circuit includes a comparator with a replica MOSFET of the power MOSFET, with scaled down dimensions, whose gate is coupled to the gate electrode of the power MOSFET. A bistable circuit has an input coupled to an output of the replica MOSFET and is configured to change a logic state of the feedback signal following the transition of the switching signal when the gate voltage of the power MOSFET crosses the plateau value and the power MOSFET switches conduction state.