公开(公告)号：US20040152249A1

公开(公告)日：2004-08-05

申请号：US10763626

申请日：2004-01-23

Applicant: STMicroelectronics S.r.l.

Inventor： Gianfranco Cerofolini ,  Giuseppe Ferla

IPC: H01L021/00 ,  H01L021/336 ,  H01L021/8234

CPC classification number: H01L21/28167 ,  H01L29/51

Abstract: A method of fabricating a MOS transistor with a controllable and modulatable conduction path through a dielectric gate oxide is disclosed, wherein the transistor structure comprises a dielectric oxide layer formed between two silicon plates, and wherein the silicon plates overhang the oxide layer all around to define an undercut having a substantially rectangular cross-sectional shape. The method comprises the steps of: chemically altering the surfaces of the silicon plates to have different functional groups provided in the undercut from those in the remainder of the surfaces; and selectively reacting the functional groups provided in the undercut with an organic molecule having a reversibly reducible center and a molecular length substantially equal to the width of the undercut, thereby to establish a covalent bond to each end of the organic molecule.