公开(公告)号：US20030111689A1

公开(公告)日：2003-06-19

申请号：US10274314

申请日：2002-10-17

Applicant: STMicroelectronics S.r.l.

Inventor： Maurizio Moroni ,  Cesare Clementi

IPC: H01L021/44 ,  H01L029/76 ,  H01L029/94 ,  H01L031/062

CPC classification number: H01L29/6659 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/66659

Abstract: Process for forming salicide on active areas of MOS transistors, each MOS transistor comprising a gate and respective source and drain regions, the source and drain regions each comprising a first lightly doped sub-region adjacent the gate and a second highly doped sub-region spaced apart from the gate. The salicide is formed selectively at least over the second highly doped sub-regions of the source and drain regions of the MOS transistors, and not over the first lightly doped sub-region.