公开(公告)号：US20020099988A1

公开(公告)日：2002-07-25

申请号：US10003474

申请日：2001-10-25

Applicant: STMicroelectronics S.r.l.

Inventor： Khouri Osama ,  Stefano Gregori ,  Andrea Pierin ,  Rino Micheloni ,  Sergio Coronini ,  Guido Torelli

IPC: G11C029/00 ,  G06F007/02 ,  H03M013/00

CPC classification number: G11C27/005 ,  G11C7/062 ,  G11C11/5642 ,  G11C16/28 ,  G11C2207/063

Abstract: A circuit for reading a non-volatile memory cell has an output terminal for providing an output current, and a control terminal for receiving a voltage for controlling the output current. The reading circuit includes a feedback circuit which can be connected electrically to the output terminal and to the control terminal to generate the control voltage from a reference signal and from the output current. The feedback circuit also includes a current-amplification circuit having a first terminal for receiving a current-error signal derived from the reference signal and from the output current, and a second terminal for supplying an amplified current.