公开(公告)号：US20220352028A1

公开(公告)日：2022-11-03

申请号：US17729191

申请日：2022-04-26

Applicant: STMicroelectronics S.r.l. ,  STMicroelectronics (Crolles 2) SAS

Inventor： Pierpaolo MONGE ROFFARELLO ,  Isabella MICA ,  Didier DUTARTRE ,  Alexandra ABBADIE

IPC: H01L21/8249 ,  H01L27/06 ,  H01L21/02 ,  H01L21/324 ,  H01L21/763

Abstract: A substrate made of doped single-crystal silicon has an upper surface. A doped single-crystal silicon layer is formed by epitaxy on top of and in contact with the upper surface of the substrate. Either before or after forming the doped single-crystal silicon layer, and before any other thermal treatment step at a temperature in the range from 600° C. to 900° C., a denuding thermal treatment is applied to the substrate for several hours. This denuding thermal treatment is at a temperature higher than or equal to 1,000° C.